JEB05LCDF‐AU for ESD Protection
JieJie Microelectronics Co., Ltd.
FIG.3: Pulse derating curve
FIG.4: ESD clamping (15kV contact)
PPP derating in percentage(%)
100
Percent of IPPM
100
90
80
60
40
30ns
60ns
20
10
0
t(ns)
TJ(℃)
0
0
30
60
tr 0.7 to 1ns
0
25
50
75
100
125
150
175
FIG.5:Capacitance vs.reverse voltage
FIG.6:Clamping voltage vs.peak pulse current
CJ(pF)
VC(V)
0.3
20
f=1MHz
18
16
14
12
10
8
0.2
0.1
0
6
4
2
0
VR(V)
0
IPP(A)
0
1
2
3
4
5
-5
-4
-3 -2
-1
1
2
3
4
5
SOLDERING PARAMETERS
Pb-Free assembly
(see figure at right)
Reflow Condition
-Temperature Min (Ts(min)
)
+150℃
Reflow condition
Pre
-Temperature Max(Ts(max)
-Time (Min to Max) (ts)
)
+200℃
tp
Heat
TP
TL
Critical Zone
TL to TP
60-180 secs.
Ramp-up
tL
Average ramp up rate (Liquidus Temp
(TL)to peak)
3℃/sec. Max
TS(max)
Ramp-down
Preheat
ts
Ts(max) to TL - Ramp-up Rate
3℃/sec. Max
+217℃
TS(min)
25
-Temperature(TL)(Liquidus)
Reflow
time to peak temperatue
Time
-Temperature(tL)
60-150 secs.
+260(+0/-5)℃
(t 25℃ to peak)
Peak Temp (Tp)
Time within 5℃of actual Peak Temp (tp) 20-40secs.
Ramp-down Rate
6℃/sec. Max
8 min. Max
+260℃
Time 25℃ to Peak Temp (TP)
Do not exceed
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