Datasheet > JCT610A

JCT610A

更新时间： 2022-02-26 11:08:23

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描述
10A SCRs

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JCT610A 数据手册

JCT610/810 Series

JieJie Microelectronics CO. , Ltd

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

IT(RMS) (A)

P(w)

α=180°

TO-251/

TO-220B

TO-252

(Non-Ins)

TO-220A(Ins)/

TO-220F(Ins)

IT(RMS) (A)

Tc (℃)

100

125

FIG.3: Surge peak on-state current versus

FIG.4: On-state characteristics (maximum

number of cycles

values)

ITM (A)

ITSM (A)

100

140

120

100

tp=10ms

One cycle

Tj=125℃

Tj=25℃

VTM (V)

Number of cycles

100

1000

FIG.5: Non-repetitive surge peak on-state current

FIG.6: Relative variations of gate trigger

current, holding current and latching current

versus junction temperature

for a sinusoidal pulse with width tp<10ms, and

corresponging value of I t (dI/dt < 50A/μs)

ITSM (A), I²t (A s)

IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)

10³

3.0

2.5

2.0

ITSM

dI/dt

IGT

10²

1.5

1.0

0.5

0.0

IH&IL

I²t

Tj(℃)

40 60

tp(ms)

0.01

-40 -20

80 100 120 140

0.1

Information furnished in this document is believed to be accurate and reliable.

However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the

consequences of use without consideration for such information nor use beyond it.

Information mentioned in this document is subject to change without notice, apart

from that when an agreement is signed, Jiangsu JieJie complies with the agreement.

Products and information provided in this document have no infringement of patents.

Jiangsu JieJie assumes no responsibility for any infringement of other rights of third

parties which may result from the use of such products and information.

This document is the third version which is made in 5-June-2015. This document

supersedes and replaces all information previously supplied.

is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.

TEL：+86-513-83639777

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