Datasheet > JCD08A065B

JCD08A065B

更新时间： 2024-10-01 14:53:19

品牌	Logo	应用领域
捷捷微 - JJM		二极管
页数	文件大小	规格书
4页	323K
描述
碳化硅二极管

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数据手册

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JCD08A065B 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd

JCD08A065B

SiC Schottky Diode

Rev.2.0

DESCRIPTION:

 650V Schottky rectifier

 Zero reverse recovery current

 Zero forward recovery voltage

 High frequency operation

 Switching characteristics independent of temperature

 Fast switch

 Positive temperature coefficient of forward voltage (V_F)

BENEFIT:

 Lower switching loss

 No thermal runaway in parallel devices

 Lower heatsink dependent

 Electrically isolated package

 Ceramic package provides 2.5KV isolation

TO-220A-2L

APPLICATION:

 HAVC

 Switch mode power supplies(SMPS)

 Boost diodes in PFC or DC/DC stages

 Free wheeling diodes in inverter stages

 AC/DC converters

ABSOLUTE MAXIMUM RATING

(Rating at 25℃ junction temperature unless otherwise specified.)

Parameter

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

Symbol

V_RRM

V_DC

Value

650

Unit

Continuous forward current

T_C=150℃

I_F

Non-repetitive peak forward surge

current

t_p=10ms,T_C=25℃

I_FSM

Non-Repetitive peak forward

surge current

T_C=25˚C, t_P= 100μs,

I_FMax

P_tot

T_j

280

63.2

Pulse

Total Power dissipation

T_C=25℃

℃

Operating junction temperature

-55 to+175

Storage temperature range

T_stg

-55 to+175

℃

TEL：+86-513-83639777 -1 / 4-

http://www.jjwdz.com

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