Datasheet > JCD10SJ12ACT

JCD10SJ12ACT

更新时间： 2024-10-01 14:55:07

品牌	Logo	应用领域
捷捷微 - JJM		二极管
页数	文件大小	规格书
5页	1013K
描述
碳化硅二极管

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中文翻译

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数据手册

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JCD10SJ12ACT 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JCD10SJ12ACT

SiC Schottky Diode

Rev.2.2

DESCRIPTION

 1200V Schottky diode

 Zero reverse recovery current

 Zero forward recovery voltage

 High frequency operation

 Switching characteristics independent of temperature

 Fast switch

 Positive temperature coefficient of forward voltage (V_F)

BENEFIT

 Lower switching loss

TO-247J

 No thermal runaway in parallel devices

 Lower heatsink dependent

PIN 1

PIN 2

PIN 3

APPLICATION

 Switch mode power supplies(SMPS)

 Boost diodes in PFC or DC/DC stages

 Free wheeling diodes in inverter stages

 AC/DC converters

Symbol

ABSOLUTE MAXIMUM RATING (Rating at 25℃ junction temperature unless otherwise specified.)

Parameter

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

Symbol

V_RRM

V_DC

Value

1200

5/10

Unit

Average forward current

T_C=160℃

I_F(AV)

Repetitive peak forward surge

current

t_P=10ms,T_C=25℃

I_FRM

I_FSM

I_FMax

Non-repetitive peak forward surge

current

Non-repetitive peak forward surge T_C=25℃,t_P=10μs,

400

current

Pulse

T_C=25℃

T_C=110℃

130/260

56/112

Power dissipation

P_tot

Operating junction and storage temperature range

T_j,T_stg

-55 to+175

℃

TEL：+86-513-83639777

-1 / 5-

http://www.jjwdz.com

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