Datasheet > JCD20Z65ACT

JCD20Z65ACT

更新时间： 2024-10-01 14:55:59

品牌	Logo	应用领域
捷捷微 - JJM		二极管
页数	文件大小	规格书
5页	1052K
描述
碳化硅二极管

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中文翻译

获取价格

数据手册

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JCD20Z65ACT 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JCD20Z65ACT

SiC Schottky Diode

Rev.2.1

DESCRIPTION

 650V Schottky diode

 Zero reverse recovery current

 Zero forward recovery voltage

 High frequency operation

 Switching characteristics independent of temperature

 Fast switch

 Positive temperature coefficient of forward voltage (V_F)

BENEFIT

 Lower switching loss

 No thermal runaway in parallel devices

 Lower heatsink dependent

 Electrically isolated package

 Ceramic package provides 2500V isolation

TO-3P (Ins)

Symbol

Case

(Insulated)

APPLICATION

 Switch mode power supplies(SMPS)

 Boost diodes in PFC or DC/DC stages

 Free wheeling diodes in inverter stages

 AC/DC converters

ABSOLUTE MAXIMUM RATING (Rating at 25℃ junction temperature unless otherwise specified.)

Parameter

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

Symbol

Value

Unit

V_RRM

650

V_DC

650

10*

20**

70*

Average forward current

T_C=130℃

I_F(AV)

I_FRM

I_FSM

I_FMax

Repetitive peak forward surge

current

t_P=10ms,T_C=25℃

140**

90*

Non-repetitive peak forward surge

current

180**

Non-repetitive peak forward surge T_C=25℃, t_P=10μs,

800*

current

Pulse

T_C=25℃

T_C=110℃

93.7*

Power dissipation

P_tot

T_j

40.6**

Operating junction temperature range

Storage temperature range

-55 to+175

℃

T_stg

TEL：+86-513-83639777

-1 / 5-

http://www.jjwdz.com

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