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JANTX1N6467US

更新时间： 2024-01-11 19:11:46
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
6页 508K
描述
Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors

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中文翻译

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JANTX1N6467US 技术参数

是否Rohs认证： 不符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：N其他特性：METALLURGICALLY BODED
最小击穿电压：43.7 V外壳连接：ISOLATED
最大钳位电压：63.5 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-MELF-R2JESD-609代码：e0
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：METAL
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified参考标准：MIL-19500/551
最大重复峰值反向电压：40.3 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

JANTX1N6467US 数据手册

 浏览型号JANTX1N6467US的Datasheet PDF文件第2页浏览型号JANTX1N6467US的Datasheet PDF文件第3页浏览型号JANTX1N6467US的Datasheet PDF文件第4页浏览型号JANTX1N6467US的Datasheet PDF文件第5页浏览型号JANTX1N6467US的Datasheet PDF文件第6页 
1N6461US – 1N6468US  
Qualified Levels:  
JAN, JANTX, and  
JANTXV  
Voidless Hermetically Sealed Unidirectional  
Available on  
commercial  
versions  
Transient Voltage Suppressors  
Qualified per MIL-PRF-19500/551  
DESCRIPTION  
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient  
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for  
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”  
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing  
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded  
packages for thru-hole mounting.  
“B” SQ-MELF  
Package  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
•
•
•
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.  
Available as 500 watt peak pulse power (PPP).  
Also available in:  
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.  
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.  
Triple-layer passivation.  
“B” Package  
(axial –leaded)  
1N6461 - 1N6468  
Internal “Category 1” metallurgical bonds.  
Voidless hermetically sealed glass package.  
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in  
reference to MIL-PRF-19500 is also available.  
(See part nomenclature for all available options.)  
•
RoHS compliant versions available (commercial grade only).  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
Military and other high-reliability applications.  
Extremely robust construction.  
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.  
Protection from secondary effects of lightning per select levels in IEC61000-4-5.  
Square-end-cap terminals for easy placement.  
Nonsensitive to ESD per MIL-STD-750 method 1020.  
Inherently radiation hard as described in Microsemi “MicroNote 050”.  
MAXIMUM RATINGS @ 25 ºC  
MSC – Lawrence  
6 Lake Street,  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Parameters/Test Conditions  
Symbol  
TJ and TSTG  
RӨJEC  
IFSM  
Value  
-55 to +175  
20  
Unit  
oC  
Junction and Storage Temperature  
Thermal Resistance, Junction to Endcap  
Forward Surge Current @ 8.3 ms half-sine  
Forward Voltage @ 1 Amp  
ºC/W  
A
80  
Fax: (978) 689-0803  
VF  
1.5  
V
MSC – Ireland  
PPP  
500  
W
Peak Pulse Power @ 10/1000 µs  
Reverse Power Dissipation (1)  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
PR  
2.5  
W
oC  
Solder Temperature @ 10 s  
260  
Notes: 1. Derate at 50 mW/oC (see figure 4).  
Website:  
www.microsemi.com  
T4-LDS-0286-1, Rev. 1 (4/22/13)  
©2013 Microsemi Corporation  
Page 1 of 6  
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中文翻译

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JANTX1N6467US 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N6467US MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, SU
JANTXV1N6467US MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, SU
1N6467US MICROSEMI

完全替代

 Transient Voltage Suppressor

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JANTX1N6468 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon,
JANTX1N6468 SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 52V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N6468A SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon
JANTX1N6468US MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, SU
JANTX1N6468US SEMTECH

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 		Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, SU
JANTX1N6469US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N647 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon,
JANTX1N6470 SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N6470US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N6470US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, GLAS

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