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JANSM2N3500 PDF预览

JANSM2N3500

更新时间: 2024-09-27 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
3页 105K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANSM2N3500 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
风险等级:5.38Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-19500; RH - 3K Rad(Si)
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):1150 ns
最大开启时间(吨):115 nsBase Number Matches:1

JANSM2N3500 数据手册

 浏览型号JANSM2N3500的Datasheet PDF文件第2页浏览型号JANSM2N3500的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/366  
DEVICES  
2N3498  
2N3498L  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
2N3499  
2N3499L  
2N3500  
2N3500L  
2N3501  
2N3501L  
2N3501UB  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N3498* 2N3501*  
2N3499* 2N3501*  
Parameters / Test Conditions  
Symbol  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
100  
100  
6.0  
150  
150  
6.0  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Vdc  
500  
300  
mAdc  
TO-5*  
2N3498L, 2N3499L  
2N2500L, 2N3501L  
@ TA = +25°C  
@ TC = +25°C  
1.0  
5.0  
W
W
Total Power Dissipation  
PT  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
Symbol  
RθJC  
Max.  
30  
Unit  
°C/W  
°C/W  
175  
RθJA  
* Electrical characteristics for “L” suffix devices are identical to the “non L”  
corresponding devices.  
1. Derate linearly 5.71 W/°C for TA > 25°C  
2. Derate linearly 28.6 W/°C for TC > 25°C  
TO-39* (TO-205AD)  
2N3498, 2N3499  
2N3500, 2N3501  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol Min. Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
2N3498, 2N3499 V(BR)CEO  
2N3500, 2N3501  
100  
150  
Vdc  
Collector-Base Cutoff Current  
ηAdc  
ηAdc  
μAdc  
μAdc  
V
CB = 50Vdc  
VCB = 75Vdc  
CB = 100Vdc  
50  
50  
10  
10  
2N3498, 2N3499  
2N3500, 2N3501  
2N3498, 2N3499  
2N3500, 2N3501  
ICBO  
3 PIN  
2N3501UB  
V
VCB = 150Vdc  
T4-LDS-0056 Rev. 1 (080812)  
Page 1 of 3  

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