Datasheet > JANSM2N5154

JANSM2N5154

更新时间： 2023-01-02 22:04:48

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
8页	775K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANSM2N5154 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.88	认证状态：	Qualified

JANSM2N5154 数据手册

JANS 2N5152 and JANS 2N5154

Qualified Levels:

JANSM, JANSD,

JANSP, JANSL,

JANSR, JANSF

RADIATION HARDENED

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

DESCRIPTION

These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N5152 and 2N5154.

JANS RHA qualifications are available per MIL-PRF-19500/544.

TO-39 (TO-205AD)

Package

Also available in:

APPLICATIONS / BENEFITS

TO-5 Package

(long-leaded)

•

High frequency operation.

Lightweight.

JANS_2N5152L &

JANS_2N5154L

High-speed power-switching applications.

High-reliability applications.

U3 Package

(surface mount)

JANS_2N5152U3 &

JANS_2N5154U3

MAXIMUM RATINGS

Parameters/Test Conditions

Symbol

Value

Unit

ºC

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Reverse Pulse Energy ⁽¹⁾

T_Jand T_STG

R_ӨJA

-65 to +200

175

ºC/W

R_ӨJC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Collector Current (dc)

I_C

Collector to base voltage (static), emitter open

Collector to emitter voltage (static) base open

Emitter to base voltage (static) collector open

Steady-State Power Dissipation @ T_A= +25 ºC

Steady-State Power Dissipation @ T_C= +25 ºC

V_CBO

V_CEO

V_EBO

P_D

100

5.5

Fax: (978) 689-0803

P_D

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit.

Website:

www.microsemi.com

T4-LDS-0100, Rev. 2 (120716)

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

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与JANSM2N5154相关器件

型号	品牌	获取价格	描述	数据表
JANSM2N5154L	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSM2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSM2N6987U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
JANSM2N7373	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254
JANSM2N7380	MICROSEMI	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me
JANSM2N7381	MICROSEMI	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
JANSMQSMCGLCE10	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
JANSMQSMCGLCE100	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
JANSMQSMCGLCE100A	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
JANSMQSMCGLCE100ATR	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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