Datasheet > JANKC2N6212

JANKC2N6212

更新时间： 2024-09-29 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
19页	116K
描述
TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 2A I(C) \| TO-66

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JANKC2N6212 数据手册

INCH-POUND

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 14 September 2001.

MIL-PRF-19500/461D

14 June 2001

SUPERSEDING

MIL-PRF-19500/461C

29 May 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER

TYPE 2N6211, 2N6212, 2N6213, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, high-voltage. Four levels of

product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO-66), and figure 2, JANHC and JANKC (die) dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

(1)

(2)

and T

(max)

θJX

CBO

CEO

EBO

STG

θJC

= +25°C

V dc

A dc

°C

°C/W

2N6211

2N6212

2N6213

3.0

275

350

400

225

300

350

6.0

1.0

2.0

-65 to +200

5.0

1.75

(1) Derate linearly at 17.1 mW/°C for T > +25°C.

(2) Derate linearly at 200 mW/°C for T > +25°C.

1.4 Primary electrical characteristics. Unless otherwise specified, T = +25°C.

Pulse response

(1)

|h |

f = 5 MHz

= 0.2 A dc

FE1

CE(SAT)

obo

100 kHz ≤ f ≤ 1 MHz

= 10 V dc

= 5 V dc

= 1.0 A dc

off

= -0.125 A dc

2N6212

V dc

2N6211

2N6213

V dc

= 1 A dc

= 0

V = 10 V dc

V dc

µs

Minimum

Maximum

175

1.4

1.6

2.0

220

0.6

3.1

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与JANKC2N6212相关器件

型号	品牌	获取价格	描述	数据表
JANKC2N6213	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 350V V(BR)CEO \| 2A I(C) \| TO-66
JANKC2N7434	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANKCA1N4148	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
JANKCA1N4148-1	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, SIMILAR TO DO-35, 2 PIN
JANKCA1N4153-1	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
JANKCA1N4565A	CDI-DIODE	获取价格	Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3
JANKCA1N4566A	CDI-DIODE	获取价格	Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3
JANKCA1N4566A	MICROSEMI	获取价格	Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3
JANKCA1N4567A	CDI-DIODE	获取价格	Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3
JANKCA1N4568	CDI-DIODE	获取价格	Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3

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