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J201-18-E3 PDF预览

J201-18-E3

更新时间: 2024-02-11 13:34:17
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 96K
描述
Transistor

J201-18-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84FET 技术:JUNCTION
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.31 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

J201-18-E3 数据手册

 浏览型号J201-18-E3的Datasheet PDF文件第1页浏览型号J201-18-E3的Datasheet PDF文件第3页浏览型号J201-18-E3的Datasheet PDF文件第4页浏览型号J201-18-E3的Datasheet PDF文件第5页浏览型号J201-18-E3的Datasheet PDF文件第6页 
J/SST201 Series  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C  
a. Derate 2.8 mW/_C above 25_C  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
c
J/SST201  
J/SST202  
J/SST204  
Parameter  
Symbol  
Test Conditions  
Typa Min Max Min Max  
Min  
Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= 1 mA , V = 0 V  
40  
40  
25  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
V
= 15 V, I = 10 nA  
0.3  
1.5  
1
0.8  
4  
4.5  
0.3  
2  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
0.2  
0.9  
0.2  
3
mA  
pA  
nA  
DSS  
DS  
GS  
V
= 20 V, V = 0 V  
2  
1  
2  
2
100  
100  
100  
GS  
DG  
DS  
Gate Reverse Current  
I
GSS  
T
= 125_C  
A
Gate Operating Current  
Drain Cutoff Current  
I
G
V
= 10 V, I = 0.1 mA  
D
pA  
V
I
V
= 15 V, V = 5 V  
DS GS  
D(off)  
Gate-Source Forward Voltage  
V
I
= 1 mA , V = 0 V  
0.7  
GS(F)  
G
DS  
Dynamic  
Common-Source  
V
= 15 V, V = 0 V  
GS  
DS  
g
0.5  
1
0.5  
mS  
pF  
fs  
Forward Transconductance  
f = 1 kHz  
Common-Source  
Input Capacitance  
C
iss  
4.5  
1.3  
6
V
V
= 15 V, V = 0 V  
GS  
f = 1 MHz  
DS  
DS  
Common-Source  
Reverse Transfer Capacitance  
C
rss  
= 10 V, V = 0 V  
GS  
f = 1 kHz  
nV⁄  
Hz  
Equivalent Input Noise Voltage  
e
n
Notes  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
b. Pulse test: PW v300 ms duty cycle v3%.  
NPA, NH  
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
2

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