Datasheet > J108-TR1-E3

J108-TR1-E3

更新时间： 2024-01-05 13:59:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	68K
描述
Transistor

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技术参数
数据手册

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J108-TR1-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.4 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

J108-TR1-E3 数据手册

J/SST108 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. Drain Current

1000

_DS@ I_D= 10 mA, V_GS= 0 V

_DSS@ V_DS= 15 V, V_GS= 0 V

= 25_C

800

600

400

200

V_GS(off)= –2 V

r_DS

I_DSS

–4 V

–8 V

–2

–4

–6

–8

–10

100

V_GS(off)– Gate-Source Cutoff Voltage (V)

I_D– Drain Current (mA)

On-Resistance vs. Temperature

Output Characteristics

100

= 10 mA

changes X 0.7%/_C

V_GS(off)= –2 V

= –2 V

GS(off)

V_GS= 0 V

–0.2 V

–4 V

–8 V

–0.4 V

–0.6 V

–0.8 V

–55 –35 –15

85 105 125

– Temperature (_C)

V_DS– Drain-Source Voltage (V)

Turn-On Switching

Turn-Off Switching

independent

d(off)

t approximately independent of I_D

V_DD= 1.5 V, R_G= 50 Ω

of device V

GS(off)

V_DD= 1.5 V, V_GS(L)= –10 V

= –10 V

GS(L)

V_{GS off)}= –2 V

(

@ I_D= 25 mA

d(on)

@ I = 10 mA

d(on)

V_GS(off)= –8 V

d(off)

–2

–4

–6

–8

–10

V_GS(off)– Gate-Source Cutoff Voltage (V)

I_D– Drain Current (mA)

Document Number: 70231

www.vishay.com

S-04028—Rev. E, 04-Jun-01

7-3

1 234 5 6

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