是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | MS-001BA, PLASTIC, DIP-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.8 | 内置保护: | OVER CURRENT; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.59 mm |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出电流流向: | SOURCE AND SINK | 标称输出峰值电流: | 4 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 4.57 mm | 最大供电电压: | 35 V |
最小供电电压: | 4.5 V | 标称供电电压: | 18 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 35 |
断开时间: | 0.059 µs | 接通时间: | 0.06 µs |
宽度: | 7.62 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXDF404SI | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF404SI-16 | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF404SIA | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF404SIA-16 | IXYS |
获取价格 |
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502 | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502D1 | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502D1T/R | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502PI | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502SIA | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDF502SIAT/R | IXYS |
获取价格 |
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |