Datasheet > ISL71091SEHF20SAMPLE

ISL71091SEHF20SAMPLE

更新时间： 2024-01-22 10:06:33

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
14页	1353K
描述
THREE TERM VOLTAGE REFERENCE

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技术参数
数据手册

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ISL71091SEHF20SAMPLE 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.68	模拟集成电路 - 其他类型：	THREE TERMINAL VOLTAGE REFERENCE
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

ISL71091SEHF20SAMPLE 数据手册

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ISL71091SEH20

Total Dose Radiation Characteristics

This data is typical mean test data post total dose radiation exposure at both low dose rate (LDR) of <10mrad(Si)/s to 50krads and at a high dose rate

(HDR) of 50 to 300rad(Si)/s to 150krads. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor

are they guaranteed. LDR data to 150krads will be added when available. V_IN= 5V, T_A= +25°C, I_OUT= 0, C_IN= 0.1µF, C_L= 1µF and C_COMP= 0.001µF

unless otherwise specified.

2.054

2.052

2.050

2.048

2.046

2.044

2.042

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

SPEC LIMIT

HDR BIAS

LDR GND

HDR GND

LDR GND

LDR BIAS

HDR BIAS

SPEC LIMIT

100

150

ANNEAL

100

150

ANNEAL

TOTAL DOSE (krad (Si))

FIGURE 3. V_OUTACCURACY SHIFT

FIGURE 4. SUPPLY CURRENT SHIFT

SPEC LIMIT

LDR BIAS

HDR GND

LDR GND

HDR BIAS

LDR BIAS

HDR GND

HDR BIAS

-10

-20

-30

-40

-50

LDR GND

-2

-4

-6

SPEC LIMIT

100

150

ANNEAL

100

150

ANNEAL

TOTAL DOSE (krad (Si))

FIGURE 5. LINE REGULATION SHIFT

FIGURE 6. LOAD REGULATION (SOURCING) SHIFT

3.0

2.5

2.0

1.5

1.0

0.5

100

SPEC LIMIT

HDR BIAS

LDR GND

HDR GND

LDR BIAS

LDR GND

HDR GND

LDR BIAS

-20

-40

-60

-80

-100

SPEC LIMIT

ANNEAL

100

150

100

150

ANNEAL

TOTAL DOSE (krad (Si))

FIGURE 7. LOAD REGULATION (SINKING) SHIFT

FIGURE 8. DROPOUT SHIFT

FN8632.1

July 11, 2014

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