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ISL21009BMB825EP PDF预览

ISL21009BMB825EP

更新时间: 2024-09-30 05:39:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL 光电二极管
页数 文件大小 规格书
14页 558K
描述
High Voltage Input Precision, Low Noise FGA™ Voltage References

ISL21009BMB825EP 数据手册

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ISL21009MEP  
®
Data Sheet  
December 15, 2008  
FN6744.0  
High Voltage Input Precision, Low Noise  
FGA™ Voltage References  
Features  
• Specifications per DSCC VID V62/08629  
The ISL21009MEP FGA™ voltage references are extremely  
low power, high precision, and low noise voltage references  
fabricated on Intersil’s proprietary Floating Gate Analog  
technology. The ISL21009MEP features very low noise  
(4.5µVP-P for 0.1Hz to 10Hz), low operating current (180µA,  
Max), and 3ppm/°C of temperature drift. In addition, the  
ISL21009 family features guaranteed initial accuracy as low  
as ±0.5mV.  
• Full Mil-Temp Electrical Performance from -55°C to +125°C  
• Controlled Baseline with One Wafer Fabrication Site and  
One Assembly/Test Site  
• Full Homogeneous Lot Processing in Wafer Fab  
• No Combination of Wafer Fabrication Lots in Assembly  
• Full Traceability Through Assembly and Test by  
Date/Trace Code Assignment  
This combination of high initial accuracy, low power and low  
output noise performance of the ISL21009MEP enables  
versatile high performance control and data acquisition  
applications with low power consumption.  
• Enhanced Process Change Notification  
• Enhanced Obsolescence Management  
• Eliminates Need for Up-Screening a COTS Component  
• Output Voltages . . . . . . . . . . . . . . 2.500V, 4.096V, 5.000V  
• Initial Accuracy. . . . . . . . . . . . . . . . . . . . .±0.5mV, ±1.0mV  
• Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V  
• Output Voltage Noise . . . . . . . . .4.5µVP-P (0.1Hz to 10Hz)  
• Supply Current . . . . . . . . . . . . . . . . . . . . . . . .180µA (Max)  
Temperature Coefficient. . . . . . . . . . . . 3ppm/°C, 5ppm/°C  
• Output Current Capability. . . . . . . . . . . . . . . Up to ±7.0mA  
• Operating Temperature Range. . . . . . . . .-55°C to +125°C  
• Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ld SOIC  
Device Information  
The specifications for an Enhanced Product (EP) device are  
defined in a Vendor Item Drawing (VID), which is controlled  
by the Defense Supply Center in Columbus (DSCC).  
“Hot-links” to the applicable VID and other supporting  
application information are provided on our website.  
Available Options  
VOUT  
OPTION  
(V)  
INITIAL  
ACCURACY  
(mV)  
TEMPCO.  
(ppm/°C)  
PART NUMBER  
ISL21009BMB825EP  
ISL21009CMB825EP  
ISL21009BMB841EP  
ISL21009BMB850EP  
ISL21009CMB850EP  
2.500  
2.500  
4.096  
5.000  
5.000  
±0.5  
±1.0  
±0.5  
±0.5  
±1.0  
3
5
3
3
5
Applications  
• Defense/Commercial Avionics  
• Radar/Sonar Systems  
• Signal Processing Applications  
Pinout  
ISL21009MEP  
(8 LD SOIC)  
TOP VIEW  
GND or NC  
VIN  
1
2
3
4
8
7
6
5
DNC  
DNC  
DNC  
VOUT  
GND  
TRIM or NC  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
FGA is a trademark of Intersil Corporation. Copyright Intersil Americas Inc. 2008. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  
1

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