®
IS93C46A
IS93C56A
IS93C66A
ISSI
DCELECTRICALCHARACTERISTICS
TA = 0°C to +70°C for Commercial and –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
IOL = 100 µA
Vcc
Min.
—
Max.
0.2
0.4
—
Unit
VOL
VOL1
VOH
VOH1
VIH
Output LOW Voltage
2.5V to 5.5V
4.5V to 5.5V
2.5V to 5.5V
4.5V to 5.5V
V
V
V
V
V
Output LOW Voltage
Output HIGH Voltage
Output HIGH Voltage
Input HIGH Voltage
IOL = 2.1 mA
—
IOH = –100 µA
IOH = –400 µA
VCC – 0.2
2.4
—
2.5V to 5.5V
4.5V to 5.5V
0.7XVCC
0.7XVCC
VCC+1
VCC+1
VIL
Input LOW Voltage
2.5V to 5.5V
4.5V to 5.5V
–0.3
–0.3
0.2XVCC
0.8
V
ILI
Input Leakage
VIN = 0V to VCC (CS, SK,
D
IN,ORG)
0
0
2.5
2.5
µA
µA
ILO
Output Leakage
VOUT = 0V to VCC, CS = 0V
Notes:
Automotive data is preliminary. Automotive grade devices in this table are to be tested with Vcc = 2.7V to 5.5V and 4.5V to 5.5V.
POWER SUPPLY CHARACTERISTICS
TA = 0°C to +70°C for Commercial and –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
TestConditions
Vcc
2.7V
Min. Typ. Max.
Unit
ICC
Vcc Operating
Supply Current
CS = VIH, SK = 1 MHz
CMOS Input Levels
—
0.5
0.5
1.5
1.5
mA
5.0V
ISB
Standby Current
CS = DIH, SK = 0V
2.7V
5.0V
—
—
2
10
10
50
µA
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARYINFORMATIONRev. 00A
05/07/02