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IS62UP1288LL-100BI PDF预览

IS62UP1288LL-100BI

更新时间: 2024-10-01 19:50:23
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
12页 72K
描述
Standard SRAM, 128KX8, 100ns, CMOS, PBGA36, MINI, BGA-36

IS62UP1288LL-100BI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:MINI, BGA-36针数:36
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.92
最长访问时间:100 nsJESD-30 代码:R-PBGA-B36
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:36
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):240
认证状态:Not Qualified最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

IS62UP1288LL-100BI 数据手册

 浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第2页浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第3页浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第4页浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第5页浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第6页浏览型号IS62UP1288LL-100BI的Datasheet PDF文件第7页 
®
ISSI  
ADVANCE INFORMATION  
MAY 1999  
TARGET SPECIFICATION  
IS62Ux1288 Series  
128K x 8 LOW VOLTAGE, LOW POWER  
CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
• Voltage range options  
The ISSI IS62Ux1288 series is a low voltage, 131,072  
words by 8 bits, CMOS SRAM. It is fabricated using ISSI's  
low voltage, six transistor (6T), CMOS technology. The  
series is targeted to satisfy the demands of the state-of-  
the-art technologies such as cell phones and pagers.  
-- 1.6V to 2.0V: IS62UT1288  
-- 1.8V to 2.2V: IS62US1288  
-- 2.3V to 2.7V: IS62UR1288  
-- 2.7V to 3.3V: IS62UP1288  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels. Additionally, easy  
memory expansion is provided by using Chip Enable and  
Output Enable inputs, CE and OE. The active LOW Write  
Enable (WE) controls both writing and reading of the  
memory.  
• Battery backup (SL/LL version)  
-- 1.0V (min.) data retention  
• Access times: 55, 70, and 100 ns  
• Fully static operation and tri-state outputs  
• Industrial temperature available  
• Available in 36-ball mini BGA and a 32-pin  
sTSOP (I)  
The IS62Ux1288 series is packaged in a 36-ball mini BGA  
and a 32-pin sTSOP (I).  
PRODUCT SERIES OVERVIEW  
Standby Current (µA)  
Part No.  
Voltage (V)  
Speeds (ns)  
Active ICC (mA)  
LL  
SL  
Temperature (°C)  
IS62UP1288  
IS62UP1288(1)  
IS62UR1288  
IS62UR1288(1)  
IS62US1288  
IS62US1288(1)  
IS62UT1288  
IS62UT1288(1)  
3.0, ±0.3  
3.0, ±0.3  
2.5, ±0.2  
2.5, ±0.2  
2.0, ±0.2  
2.0, ±0.2  
1.8, ±0.2  
1.8, ±0.2  
55, 70, 100  
55, 70, 100  
55, 70, 100  
55, 70, 100  
55, 70, 100  
55, 70, 100  
55, 70, 100  
55, 70, 100  
25 @ 70 ns  
25 @ 70 ns  
15 @ 70 ns  
15 @ 70 ns  
10 @ 70 ns  
10 @ 70 ns  
10 @ 70 ns  
10 @ 70 ns  
10  
10  
10  
10  
10  
10  
10  
10  
2
2
2
2
2
2
2
2
0 to 70  
40 to 85  
0 to 70  
40 to 85  
0 to 70  
40 to 85  
0 to 70  
40 to 85  
Note:  
1. Current value is max.  
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible  
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
2231 Lawson Lane • Santa Clara, CA 95054-3311 • 1-800-379-4774 • Fax: (408) 588-0806  
e-mail: sales@issiusa.com • www.issiusa.com  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
TARGET SPECIFICATION SR067-0T  
1
05/01/99  

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IS62UP1288SL-55BI ISSI

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IS62UP25616LL-70BI ISSI

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Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, MINI, BGA-48