是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSOP2-50/44 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 访问模式: | FAST PAGE WITH EDO |
最长访问时间: | 60 ns | 其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN /SELF REFRESH |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G44 |
JESD-609代码: | e0 | 内存密度: | 16777216 bit |
内存集成电路类型: | EDO DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 44 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装等效代码: | TSOP44/50,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 认证状态: | Not Qualified |
刷新周期: | 1024 | 自我刷新: | YES |
最大待机电流: | 0.001 A | 最大压摆率: | 0.145 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS41C16105 | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105 | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50K | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50K | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50KE | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50KI | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50KI | ISSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IS41C16105-50KL | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42 | |
IS41C16105-50KLE | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42 | |
IS41C16105-50KLI | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-42 |