Datasheet > IRSM005800MH

IRSM005800MH

更新时间： 2022-06-24 15:44:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	645K
描述
Half-Bridge IPM for Low Voltage Applications

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数据手册

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IRSM005800MH 数据手册

IRSM005-800MH

Inverter Dynamic Electrical Characteristics

V_BIAS(V_CC, V_BS)=15V, TJ=25ºC, unless otherwise specified.

gfs

Forward Transconductance

Total Gate Charge

159

ꢀꢀꢀ

I_D=50A V_DS= 10V

Q_G

I_D=50A

V_DS= 20V

V_GS=10V

Q_GS

Q_GD

Q_SYNC

T_DON

T_R

Gate to Source Charge

Gate to Drain Charge

Total Gate Charge Sync. (Q_Gꢀ Q_{GD )}

Mosfet Turn On Delay Time

Mosfet Rise Time

I_D=50A,V_DS= 0V,V_GS= 10V

I_D=30A

V_DD= 20V

V_GS=10V

R_G=2.7ꢂ

T_DOFF

T_F

Mosfet Turn Off Delay Time

Mosfet Fall Time

C_ISS

C_OSS

C_RSS

T_RR

Input Capacitance

3174

479

332

F= 1.0MHz

V_DS= 25V

V_GS=0V

Output Capacitance

Reverse Transfer Capacitance

Reverse Recovery TIme

Reverse Recovery Charge

Reverse Recovery Current

I_F=50A

V_R=34V

dI/dt= 100A/us

Q_RR

I_RRM

0.5

Recommended Operating Conditions Driver Function

For proper operation the device should be used within the recommended conditions. All voltages are absolute

referenced to COM. The VS offset is tested with all supplies biased at 15V differential.

Symbol

V_B

Definition

Min

V_S+10

Note 1

Typ

V_S+15

ꢀꢀꢀ

Max

V_S+20

Units

High side floating supply voltage

High side floating supply offset voltage

Low side and logic fixed supply voltage

Logic input voltage LIN, HIN

V_S

V_CC

V_IN

COM

ꢀꢀꢀ

V_CC

ꢀꢀꢀ

HIN

High side PWM pulse width

ꢀꢀꢀ

ꢁs

Deadtime

Suggested dead time between HIN and LIN

0.3

0.5

ꢀꢀꢀ

March 19, 2014

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