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IRH7250PBF PDF预览

IRH7250PBF

更新时间: 2024-02-17 19:14:29
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 257K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-2

IRH7250PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:BFM
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.17其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):26 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-204AE
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:150 W最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):280 ns
最大开启时间(吨):173 nsBase Number Matches:1

IRH7250PBF 数据手册

 浏览型号IRH7250PBF的Datasheet PDF文件第1页浏览型号IRH7250PBF的Datasheet PDF文件第2页浏览型号IRH7250PBF的Datasheet PDF文件第3页浏览型号IRH7250PBF的Datasheet PDF文件第5页浏览型号IRH7250PBF的Datasheet PDF文件第6页浏览型号IRH7250PBF的Datasheet PDF文件第7页 
Post-Irradiation  
IRH7250  
Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance  
Voltage Vs. Total Dose Exposure  
Vs. Total Dose Exposure  
Fig 3. Typical Response of Transconductance  
Fig 4. Typical Response of Drain to Source  
Vs. Total Dose Exposure  
Breakdown Vs. Total Dose Exposure  
4
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