IRFIZ44N

更新时间： 2024-11-25 22:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	108K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFIZ44N 数据手册

PD - 9.1403A

IRFIZ44N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 55V

R_DS(on)= 0.024Ω

I_D= 31A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

160

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

210

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.5

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

8/25/97

12 3 4 5 6 7 8

中文翻译

下载PDF

IRFIZ44N 替代型号

型号	品牌	替代类型	描述	数据表
IRFIZ44NPBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRFIZ44N相关器件

型号	品牌	获取价格	描述	数据表
IRFIZ44N-003	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-005	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-006	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-010	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ44N-010PBF	INFINEON	获取价格	28A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFIZ44N-011	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met

与IRFIZ44N相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFIZ44N

IRFIZ44N 数据手册

IRFIZ44N 替代型号

与IRFIZ44N相关器件

与IRFIZ44N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFIZ44N

IRFIZ44N 数据手册

IRFIZ44N 替代型号

与IRFIZ44N相关器件

与IRFIZ44N相关文章

您还可以找

您在本页遇到什么问题？