Datasheet > IR2127C

IR2127C

更新时间： 2023-01-02 22:11:36

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
17页	142K
描述
Buffer/Inverter Based MOSFET Driver, CMOS,

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IR2127C 数据手册

IR2127C/IR2128C/IR21271C

Device Information

Process & Design Rule

Transistor Count

Die Size

HVDCMOS 600V

206

77 x 85 (mils)

Die Outline

Thickness of Gate Oxide

Connections

800Å

Poly Silicon

4.0 µm

Material

Width

First

Layer

Spacing

Thickness

Material

Width

Spacing

Thickness

6.0 µm

5000Å

Al - Si (Si: 1.0% ±0.1%)

6.0 µm

Second

Layer

9.0 µm

20,000Å

Contact Hole Dimension

Insulation Layer

5 µm X 5 µm

PSG (SiO₂)

1.6 µm

PSG (SiO₂)

1.6 µm

Material

Thickness

Material

Passivation

Thickness

Method of Saw

Method of Die Bond

Wire Bond

Full Cut

Ablebond 84 - 1

Thermosonic

Au (1.3 mil)

Method

Material

Die Area

Lead Plating

Types

Leadframe

70-90% Sn (Balance Pb)

8-Lead PDIP / 8-Lead SOIC

EME6300H, EM6600RA

Package

Materials

Remarks:

www.irf.com

1...3 4 567 8 9...17

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