IR2101STR

更新时间： 2024-02-04 17:53:32

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管 PC
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6页	369K
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IR2101STR 数据手册

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Data Sheet No. PD-6.043C

IR2101

HIGH AND LOW SIDE DRIVER

Features

Product Summary

n Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

n Gate drive supply range from 10 to 20V

n Undervoltage lockout

600V max.

100 mA / 210 mA

10 - 20V

OFFSET

I +/-

OUT

n 5V Schmitt-triggered input logic

n Matched propagation delay for both channels

n Outputs in phase with inputs

(typ.)

130 & 90 ns

30 ns

on/off

Delay Matching

Description

Packages

The IR2101 is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels. Proprietary HVIC

and latch immune CMOS technologies enable rugge-

dized monolithic construction. The logic input is com-

patible with standard CMOS or LSTTL outputs. The

output drivers feature a high pulse current buffer stage

designed for minimum driver cross-conduction. The

floating channel can be used to drive an N-channel

power MOSFET or IGBT in the high side configura-

tion which operates up to 600 volts.

Typical Connection

up to 600V

V_CC

HIN

LIN

V_B

V_S

HIN

LIN

LOAD

COM

CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL

B-1

To Order

12 3 4 5 6

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