Datasheet > IQDH29NE2LM5CG

IQDH29NE2LM5CG

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1110K
描述
The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers

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IQDH29NE2LM5CG 数据手册

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ25ꢀV

IQDH29NE2LM5CG

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

248

3156

1.0

Diode continuous forward current

Diode pulse current

I_S

T_C=25ꢀ°C

I_S,pulse

V_SD

t_rr

T_C=25ꢀ°C

Diode forward voltage

0.74

V_GS=0ꢀV,ꢀI_F=50ꢀA,ꢀT_j=25ꢀ°C

V_R=12ꢀV,ꢀI_F=25ꢀA,ꢀdi_F/dt=100ꢀA/µs

Reverse recovery time¹⁾

Reverse recovery charge¹⁾

118

240

Q_rr

120

¹⁾Defined by design. Not subject to production test.

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-03-29

1 2 3 456 7 8...11

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