Datasheet > IPT2008-CEB

IPT2008-CEB

更新时间： 2022-12-23 01:39:01

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	207K
描述
High current density due to double mesa technology

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IPT2008-CEB 数据手册

IPT2008-xxB

ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

IPT2006-xxB

Symbol

Test Condition

Quadrant

Unit

IGT

I – II – III

MAX

VD = 12V RL = 33Ω

Tj = 25 ℃

VGT

1.5

VD=VDRM, RL=3.3KΩ,

Tj = 125 ℃

VGD

I – II – III

MIN

0.2

I – III

100

400

250

500

IG = 1.2 IGT, Tj = 125 ℃

MAX

IT = 500mA Gate open

MAX

MIN

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

(dV/dt) c=0.1V/us Tj = 125 ℃

(dV/dt) c=10V/us Tj = 125 ℃

Without snubber Tj = 125 ℃

V/us

(dI/dt)c

MIN

A/ms

STATIC CHARACTERISTICS

Symbol

VTM

Test Conditions

Value (MAX)

Unit

ITM = 28A, t p = 380uS

Tj = 25 ℃

Tj = 125 ℃

1.65

IDRM

VD = VDRM

VR = VRRM

IRRM

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j – c)

Junction to case (AC)

1.3

℃/W

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