Datasheet > IPT08Q08-BEB

IPT08Q08-BEB

更新时间： 2022-12-20 00:57:26

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	212K
描述
High current density due to double mesa technology

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IPT08Q08-BEB 数据手册

IPT08Q08-xxB

ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)

IPT08Q08-xxB

Symbol

Test Condition

Quadrant

Unit

I – II – III

IGT

MAX

100

VD = 12V RL = 30Ω

VGT

ALL

1.3

0.2

VD=VDRM, RL=3.3KΩ,

Tj = 125 ℃

VGD

MIN

I – III – IV

100

IG = 1.2 IGT

IT = 100mA

MAX

MIN

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

200

400

V/us

STATIC CHARACTERISTICS

Symbol

VTM

Test Conditions

Value(MAX)

Unit

ITM = 17A, t p = 380uS

Tj = 125 ℃

1.55

IDRM

VD = VDRM

VR = VRRM

IRRM

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j – c)

Junction to case (AC)

1.6

℃/W

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IPT08Q08-CED	IPS	High current density due to double mesa technology	获取价格