Datasheet > IPT0806-SED

IPT0806-SED

更新时间： 2022-11-09 15:15:54

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
5页	201K
描述
High current density due to double mesa technology

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IPT0806-SED 数据手册

IPT0806-xxD

Dimensions

Ref

Millimeters

Typ

Inches

Min

2.2

Max

Min

0.086

0.001

0.021

0.200

0.017

0.019

0.236

0.252

0.173

0.368

Typ

Max

0.095

0.009

0.026

0.212

0.024

0.244

0.264

0.185

0.397

2.4

0.23

0.65

5.4

0.03

0.55

5.1

0.45

0.48

0.62

6.2

6.4

6.7

4.40

9.35

4.70

10.1

0.8

4º

0.031

4º

1.37

0º

1.5

8º

0.054

0º

0.059

8º

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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与IPT0806-SED相关器件

型号	品牌	描述	获取价格	数据表
IPT0806-SEF	IPS	High current density due to double mesa technology	获取价格
IPT0806-SEI	IPS	High current density due to double mesa technology	获取价格
IPT0808-BEB	IPS	High current density due to double mesa technology	获取价格
IPT0808-BED	IPS	High current density due to double mesa technology	获取价格
IPT0808-BEF	IPS	High current density due to double mesa technology	获取价格
IPT0808-BEI	IPS	High current density due to double mesa technology	获取价格