Datasheet > IPT054N15N5

IPT054N15N5

更新时间： 2023-09-03 20:38:58

品牌	Logo	应用领域
英飞凌 - INFINEON		服务器电信电熔丝
页数	文件大小	规格书
11页	1073K
描述
英飞凌无引脚 TO 封装型 OptiMOS™ 功率 MOSFET 针对大电流应用进行优化，如叉车、轻型电动车 (LEV)、电动工具、负载点 (POL)、电信和电熔丝。此外，封装尺寸缩小了 60%，设计更为紧凑。相较于 D²PAK 7 引脚封装，无引脚 TO 封装尺寸大幅减少了 30%。同时封装高度也降低了 50%，在机架式或刀片服务器等空间狭小的应用中表现出显著优势。

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IPT054N15N5 数据手册

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ150ꢀV

IPT054N15N5

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_A=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

143

101

17.5

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

Continuous drain current¹⁾

I_D

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

V_GS=10V,T_A=25°C,R_thJA=40°C/W²⁾

Pulsed drain current³⁾

Avalanche energy, single pulse⁴⁾

I_D,pulse

E_AS

572

190

T_A=25ꢀ°C

I_D=100ꢀA,ꢀR_GS=25ꢀΩ

Gate source voltage

V_GS

-20

250

3.8

T_C=25ꢀ°C

Power dissipation

P_tot

T_A=25ꢀ°C,ꢀR_thJA=40ꢀ°C/W²⁾

IEC climatic category; DIN IEC 68-1:

55/175/56

Operating and storage temperature

T_j,ꢀT_stg

-55

175

°C

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

R_thJA

0.6

°C/W -

Thermal resistance, junction - ambient,

6 cm² cooling area

Thermal resistance, junction - ambient,

minimal footprint²⁾

R_thJA

°C/W -

¹⁾Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See Diagram 3 for more detailed information

⁴⁾See Diagram 13 for more detailed information

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-03-08

1 234 5 6 7...11

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