Datasheet > IPS65R400CE

IPS65R400CE

更新时间： 2022-02-26 12:55:16

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1100K
描述
650V CoolMOSÂª CE Power Transistor

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中文翻译

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数据手册

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IPS65R400CE 数据手册

IPD65R400CE,ꢀIPS65R400CE

MOSFET

DPAK

IPAKꢀSL

650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor

tab

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀseriesꢀcombinesꢀthe

experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.

TheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction

MOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀand

conductionꢀlossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmore

compact,ꢀlighterꢀandꢀcooler.

Drain

Pin 2, Tab

Gate

Pin 1

Features

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀEasyꢀtoꢀuse/drive

Source

Pin 3

•ꢀJEDECꢀqualfied,ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound

•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications

Applications

PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages

forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀLighting

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

I_D.

Value

700

400

15.1

Unit

mΩ

Q_g.typ

I_D,pulse

E_oss@400V

2.8

µJ

Typeꢀ/ꢀOrderingꢀCode

IPD65R400CE

Package

Marking

RelatedꢀLinks

PG-TO 252

PG-TO 251

65S400CE

see Appendix A

IPS65R400CE

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-02-23

12 3 4 5 6 7...15

中文翻译

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