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INA111AU/1KG4 PDF预览

INA111AU/1KG4

更新时间： 2024-02-06 12:51:29
品牌 Logo 应用领域
BB 仪表放大器光电二极管
页数 文件大小 规格书
14页 242K
描述
High Speed FET-Input INSTRUMENTATION AMPLIFIER

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INA111AU/1KG4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-16针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：5.13Is Samacsys：N
放大器类型：INSTRUMENTATION AMPLIFIER最大平均偏置电流 (IIB)：0.00002 µA
标称带宽 (3dB)：2 MHz最小共模抑制比：75 dB
最大输入失调电流 (IIO)：0.00001 µA最大输入失调电压：6000 µV
JESD-30 代码：R-PDSO-G16JESD-609代码：e4
长度：10.3 mm湿度敏感等级：3
负供电电压上限：-18 V标称负供电电压 (Vsup)：-15 V
最大非线性：0.04%功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP16,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TR峰值回流温度（摄氏度）：260
电源：+-15 V认证状态：Not Qualified
座面最大高度：2.65 mm标称压摆率：17 V/us
子类别：Instrumentation Amplifier最大压摆率：4.5 mA
供电电压上限：18 V标称供电电压 (Vsup)：15 V
表面贴装：YES温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压增益：10000
最小电压增益：1标称电压增益：10
宽度：7.5 mmBase Number Matches：1

INA111AU/1KG4 数据手册

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