Datasheet > INA-34063-TR1

INA-34063-TR1

更新时间： 2024-01-25 12:17:37

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
11页	75K
描述
Wide Band Low Power Amplifier, 100MHz Min, 3000MHz Max, BIPolar, SOT-363, 6 PIN

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技术参数
数据手册

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INA-34063-TR1 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.1	特性阻抗：	50 Ω
增益：	18 dB	最大输入功率 (CW)：	7 dBm
最大工作频率：	3000 MHz	射频/微波设备类型：	WIDE BAND LOW POWER
最大电压驻波比：	1.1	Base Number Matches：	1

INA-34063-TR1 数据手册

3.0 GHz Medium Power Silicon

RFIC Amplifier

Technical Data

INA-34063

Features

Surface Mount SOT-363

( SC-70) Package

Description

• +8 dBm P_{1 dB}at 1.9 GHz

Agilent’s INA-34063 is a Silicon

RFIC amplifier that offers

excellent gain and output power

for applications to 3.0 GHz.

Packaged in an ultraminiature

SOT-363 package, it requires half

of the board space of a SOT-143

package.

• 21 dB Gain at 1.9 GHz

• High Isolation 32 dB at

1.9 GHz

• Single +3V Supply

• Unconditionally Stable

Applications

Pin Connections and

Package Marking

With its wide bandwidth and high

linearity, the INA-34063 is

suitable as a driver amplifier for

various applications. The

INA-34063 also features high

reverse isolation, making it an

excellent candidate for LO buffer

applications.

• LO Buffer and Driver

Amplifier for Cellular,

Cordless, Special Mobile

Radio, PCS, ISM, Wireless

LAN, DBS, TVRO, and TV

Tuner

GND 2 1

GND 1 2

INPUT 3

OUTPUT

& V

5 GND 1

4 V

Note: Package marking provides

orientation and identification.

The INA-34063 is fabricated using

Agilent’s 30 GHz–fmax,

ISOSAT™ Silicon-bipolar process

that uses nitride, self-alignment,

submicrometer lithography,

trench isolation, ion implantation,

and polyimide intermetal dielec-

tric and scratch protection to

achieve superior performance,

uniformity and reliability.

Simplified Schematic

Output & V

Input

Gnd1

Gnd2

12 3 4 5 6 7...11

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