Datasheet > IMZA75R027M1H

IMZA75R027M1H

更新时间： 2024-04-09 19:02:57

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1518K
描述
The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.? It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.?

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IMZA75R027M1H 数据手册

CoolSiCªꢀPowerꢀDeviceꢀ750ꢀVꢀG1

IMZA75R027M1H

Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

V_DDꢀ=ꢀ500ꢀV,ꢀI_Dꢀ=ꢀ24.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

Plateau gate to source charge

Gate to drain charge

Q_GS(pl)

Q_GD

Q_G

V_DDꢀ=ꢀ500ꢀV,ꢀI_Dꢀ=ꢀ24.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

V_DDꢀ=ꢀ500ꢀV,ꢀI_Dꢀ=ꢀ24.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

Total gate charge

Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

3.9

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Drain-source reverse voltage

V_SD

5.3

V_GSꢀ=ꢀ0ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,ꢀT_jꢀ=ꢀ25ꢀ°C

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

di_S/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

MOSFET forward recovery time

t_fr

di_S/dtꢀ=ꢀ4000ꢀA/µs;ꢀseeꢀtableꢀ9

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

105

164

di_S/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

di_S/dtꢀ=ꢀ4000ꢀA/µs;ꢀseeꢀtableꢀ9

MOSFET forward recovery charge¹⁾

Q_fr

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

di_S/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9

V_DDꢀ=ꢀ500ꢀV,ꢀI_Sꢀ=ꢀ24.5ꢀA,

MOSFET peak forward recovery

current

I_frm

di_S/dtꢀ=ꢀ4000ꢀA/µs;ꢀseeꢀtableꢀ9

¹⁾ꢀQ_frꢀincludesꢀQ_oss

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2024-01-30

1...3 4 567 8 9...15

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