Datasheet > IL9270N

IL9270N

更新时间： 2022-01-14 00:05:01

品牌	Logo	应用领域
INTEGRAL		栅
页数	文件大小	规格书
12页	716K
描述
DTMF RECEIVER High-Performance Silicon-Gate CMOS

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数据手册

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IL9270N 数据手册

IL9270

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND, V_CC= 5 V ± 5%,

T_A= -10 to +70°C)

Guaranteed Limits

Symbol

V_IH

Parameter

Test Conditions

V_OUT=5 V

Min

3.6

Typ

Max

1.4

Unit

Minimum High-Level

Input Voltage

V_IL

V_OH

V_OL

I_IN

Maximum Low-Level

Input Voltage

V_OUT=5 V

No Load

Minimum High-Level

Output Voltage

4.97

Maximum Low-Level

Output Voltage

0.05

±0.1

Maximum Input Leakage V_IN=V_CCor GND

Current

µA

I_SO

Maximum Pull Up

(Source) Current

OE = 0 V

I_OL

Minimum Output-Low

(Sink) Current

V_OUT=0.4 V

V_OUT=4.6 V

V_IN=V_CC

0.8

I_OH

I_CC

Minimum Output-High

(Source) Current

0.35

Maximum Quiescent

Supply Current (per

Package)

V_TSt

R_IN

Steering Threshold

Voltage

2.2

2.5

Input Impedance (Signal @ 1 KHz

Inputs 1,2)

MΩ

V_REF

R_OR

I_OZ

Output Voltage

No Load

2.4

2.8

Output Resistance

kΩ

µA

Maximum Three-State

Leakage current

Output in High-

Impedance State

V_IN=V_IL

±0.1

V_OUT=V_CCor GND

1 2 3 456 7 8...12

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