Datasheet > IKQB200N75CP2

IKQB200N75CP2

更新时间： 2023-12-06 20:12:56

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
17页	1620K
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EDT2

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IKQB200N75CP2 数据手册

IKQB200N75CP2

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package

2 IGBT

Table 3

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.4

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_CEsatI_C= 200 A, V_GE= 15 V

T_vj= 25 °C

1.65

T_vj= 175 °C

1.7

Gate-emitter threshold

voltage

V_GEth

I_CES

I_C= 2.6 mA, V_CE= V_GE

V_CE= 750 V, V_GE= 0 V

5.8

6.5

Zero gate-voltage collector

current

T_vj= 25 °C

200

µA

T_vj= 175 °C

6000

Gate-emitter leakage

current

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 200 A, V_CE= 20 V

100

Transconductance

Input capacitance

Output capacitance

g_fs

C_ies

C_oes

C_res

140

21280

540

V_CE= 25 V, V_GE= 0 V, f = 100 kHz

Reverse transfer

capacitance

Gate charge

Q_G

V_CC= 600 V, I_C= 200 A, V_GE= 15 V

797

Turn-on delay time

t_d(on)

V_CC= 450 V, V_GE= 0/15 V, T_vj= 25 °C,

R_G(on)= 4.8 Ω,

I_C= 200 A

R_G(oﬀ)= 4.8 Ω, L = 30 nH,

T_vj= 175 °C,

I_C= 200 A

C = 144 pF

Rise time (inductive load)

Turn-oﬀ delay time

t_r

t_d(oﬀ)

t_f

V_CC= 450 V, V_GE= 0/15 V, T_vj= 25 °C,

R_G(on)= 4.8 Ω,

I_C= 200 A

R_G(oﬀ)= 4.8 Ω, L = 30 nH,

T_vj= 175 °C,

I_C= 200 A

C = 144 pF

V_CC= 450 V, V_GE= 0/15 V, T_vj= 25 °C,

407

468

R_G(on)= 4.8 Ω,

I_C= 200 A

R_G(oﬀ)= 4.8 Ω, L = 30 nH,

T_vj= 175 °C,

I_C= 200 A

C = 144 pF

Fall time (inductive load)

V_CC= 450 V, V_GE= 0/15 V, T_vj= 25 °C,

R_G(on)= 4.8 Ω,

I_C= 200 A

R_G(oﬀ)= 4.8 Ω, L = 30 nH,

T_vj= 175 °C,

I_C= 200 A

C = 144 pF

Turn-on energy

E_on

V_CC= 450 V, V_GE= 0/15 V, T_vj= 25 °C,

14.4

17.3

R_G(on)= 4.8 Ω,

I_C= 200 A

R_G(oﬀ)= 4.8 Ω, L = 30 nH,

T_vj= 175 °C,

I_C= 200 A

C = 144 pF

(table continues...)

Datasheet

Revision 1.10

2023-06-30

1 2 345 6 7...17

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