Datasheet > IKA15N60TXKSA1

IKA15N60TXKSA1

更新时间： 2024-02-29 05:13:48

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅开关功率控制晶体管
页数	文件大小	规格书
13页	491K
描述
Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3

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IKA15N60TXKSA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.63
其他特性：	HIGH SWITCHING SPEED	外壳连接：	ISOLATED
最大集电极电流 (IC)：	14.7 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	291 ns	标称接通时间 (ton)：	32 ns
Base Number Matches：	1

IKA15N60TXKSA1 数据手册

IKA15N60T

TRENCHSTOP™ Series

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

Features:



Very low V_CE(sat)1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed



Positive temperature coefficient in V_CE(sat)

Low EMI

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

PG-TO220-3 (FullPak)

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:



Air Condition

Inverters

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking Code

K15T60

Package

PG-TO220-3 (FullPAK)

IKA15N60T

600V 15A

1.5V

175C

Maximum Ratings

Parameter

Symbol

Value

Unit

V_CE

600

Collector-emitter voltage, T_j≥ 25C

DC collector current, limited by T_jmax

T_C= 25C

18.3

10.6

I_C

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

Turn off safe operating area, V_CE= 600V, T_j= 175C, t_p= 1µs

Diode forward current, limited by T_jmax

T_C= 25C

17.2

10.8

I_F

T_C= 100C

Diode pulsed current, t_plimited by T_jmax

I_{F pul s}

V_GE

Gate-emitter voltage

20

Short circuit withstand time²⁾

V_GE= 15V, V_CC 400V, T_j 150C

Power dissipation T_C= 25C

Operating junction temperature

Storage temperature

t_SC

s

P_tot

T_j

35.7

-40...+175

-55...+150

T_stg

C

Solder temperature

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

260

Isolation Voltage

V_{i sol}

2500

V_{r ms}

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits:

<1000; time between short circuits: >1s.

Rev. 2.6 25.07.2016

IFAG IPC TD VLS

12 3 4 5 6 7...13

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