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IDT72V241L10PFG8 PDF预览

IDT72V241L10PFG8

更新时间: 2024-02-27 04:23:51
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
14页 278K
描述
FIFO, 4KX9, 6.5ns, Synchronous, CMOS, PQFP32, GREEN, PLASTIC, TQFP-32

IDT72V241L10PFG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LQFP,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.38
最长访问时间:6.5 ns周期时间:10 ns
JESD-30 代码:S-PQFP-G32JESD-609代码:e3
长度:7 mm内存密度:36864 bit
内存宽度:9湿度敏感等级:3
功能数量:1端子数量:32
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX9
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:7 mmBase Number Matches:1

IDT72V241L10PFG8 数据手册

 浏览型号IDT72V241L10PFG8的Datasheet PDF文件第1页浏览型号IDT72V241L10PFG8的Datasheet PDF文件第2页浏览型号IDT72V241L10PFG8的Datasheet PDF文件第4页浏览型号IDT72V241L10PFG8的Datasheet PDF文件第5页浏览型号IDT72V241L10PFG8的Datasheet PDF文件第6页浏览型号IDT72V241L10PFG8的Datasheet PDF文件第7页 
COMMERCIALANDINDUSTRIAL  
TEMPERATURERANGES  
IDT72V201/72V211/72V221/72V231/72V241/72V251 3.3V CMOS SyncFIFO™  
256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9  
ABSOLUTEMAXIMUMRATINGS(1)  
RECOMMENDEDOPERATING  
CONDITIONS  
Symbol  
Rating  
TerminalVoltagewith  
RespecttoGND  
Com'l & Ind'l  
Unit  
V
(2)  
Symbol  
Parameter  
Min.  
Typ. Max. Unit  
VTERM  
–0.5 to +5  
VCC  
SupplyVoltage  
3.0  
3.3  
3.6  
V
Commercial/Industrial  
SupplyVoltage  
InputHighVoltage  
Commercial/Industrial  
InputLowVoltage  
Commercial/Industrial  
TSTG  
StorageTemperature  
DCOutputCurrent  
–55 to +125  
–50 to +50  
°C  
mA  
GND  
VIH  
0
2.0  
0
0
5.5  
V
V
IOUT  
NOTE:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions above those indicated in the operational  
sections of the specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
VIL  
TA  
TA  
-0.5  
0
0.8  
70  
85  
V
OperatingTemperature  
Commercial  
°C  
°C  
2. VCC terminal only.  
OperatingTemperature  
Industrial  
-40  
DCELECTRICALCHARACTERISTICS  
(Commercial: VCC = 3.3V ± 0.3V, TA = 0°C to +70°C;Industrial: VCC = 3.3V ± 0.3V, TA = -40°C to +85°C)  
IDT72V201  
IDT72V211  
IDT72V221  
IDT72V231  
IDT72V241  
IDT72V251  
Commercial and Industrial(1)  
tCLK = 10, 15, 20 ns  
Typ.  
Symbol  
Parameter  
InputLeakageCurrent(AnyInput)  
OutputLeakageCurrent  
Min.  
–1  
Max.  
1
Unit  
μA  
μA  
V
(2)  
ILI  
(3)  
ILO  
–10  
2.4  
10  
0.4  
20  
5
VOH  
VOL  
ICC1  
ICC2  
Output Logic “1” Voltage, IOH = –2mA  
Output Logic “0” Voltage, IOL = 8mA  
Active Power Supply Current  
StandbyCurrent  
V
(4,5,6)  
(4,7)  
mA  
mA  
NOTES:  
1. Industrial temperature range product for the 15ns speed grade is available as a standard device. All other speed grades are available by special order.  
2. Measurements with 0.4 VIN VCC.  
3. OE VIH, 0.4 VOUT VCC.  
4. Tested with outputs disabled (IOUT = 0).  
5. RCLK and WCLK toggle at 20 MHz and data inputs switch at 10 MHz.  
6. Typical ICC1 = 0.17 + 0.48*fS + 0.02*CL*fS (in mA) with VCC = 3.3V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2,  
CL = capacitive load (in pF).  
7. All Inputs = VCC - 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.  
CAPACITANCE (TA = +25°C, f = 1.0MHz)  
Symbol  
Parameter  
Conditions  
Max.  
Unit  
(2)  
CIN  
InputCapacitance  
VIN = 0V  
10  
pF  
(1,2)  
COUT  
OutputCapacitance  
VOUT = 0V  
10  
pF  
NOTES:  
1. With output deselected (OE VIH).  
2. Characterized values, not currently tested.  
3

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