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IDT71V3579S85PF9

更新时间： 2024-01-18 05:17:01
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
22页 285K
描述
Cache SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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IDT71V3579S85PF9 数据手册

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IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with  
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect  
Commercial and Industrial Temperature Ranges  
AbsoluteMaximumRatings(1)  
RecommendedOperating  
TemperatureSupplyVoltage  
Commercial &  
Industrial Values  
Symbol  
Rating  
Unit  
Temperature(1)  
0°C to +70°C  
-40°C to +85°C  
V
V
SS  
DD  
DDQ  
V
Grade  
(2)  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to +4.6  
V
Commercial  
Industrial  
0V  
0V  
3.3V±5%  
3.3V±5%  
3.3V±5%  
3.3V±5%  
(3,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to V  
-0.5 to VDD +0.5  
-0.5 to VDDQ +0.5  
-0 to +70  
V
V
DD  
5280 tbl 04  
NOTES:  
1. TA is the "instant on" case temperature.  
(4,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
(5,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
V
RecommendedDCOperating  
Conditions  
Commercial  
oC  
oC  
oC  
oC  
W
Symbol  
Parameter  
Core Supply Voltage  
I/O Supply Voltage  
Supply Voltage  
Min. Typ.  
3.135 3.3  
3.135 3.3  
Max.  
Unit  
V
Operating Temperature  
(7)  
TA  
DD  
V
3.465  
3.465  
0
Industrial  
-40 to +85  
Operating Temperature  
DDQ  
V
V
TBIAS  
TSTG  
Temperature  
Under Bias  
-55 to +125  
-55 to +125  
SS  
V
0
0
V
____  
IH  
DD  
V
Input High Voltage - Inputs  
Input High Voltage - I/O  
Input Low Voltage  
2.0  
V
+0.3  
V
Storage  
(1)  
____  
____  
IH  
V
DDQ  
2.0  
V
+0.3  
0.8  
V
Temperature  
-0.3(2)  
V
IL  
V
PT  
Power Dissipation  
DC Output Current  
2.0  
50  
5280 tbl 06  
NOTES:  
IOUT  
mA  
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.  
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.  
5280 tbl 03  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
3. VDDQ terminals only.  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supplies have  
ramped up. Power supply sequencing is not necessary; however, the voltage  
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.  
7. TA is the "instant on" case temperature.  
100PinTQFPCapacitance  
(TA = +25° C, f = 1.0mhz)  
119BGACapacitance  
(TA = +25° C, f = 1.0mhz)  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
5
7
pF  
7
7
pF  
CI/O  
pF  
CI/O  
pF  
5280 tbl 07  
5280 tbl 07a  
165fBGACapacitance  
(TA = +25° C, f = 1.0mhz)  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
7
7
pF  
CI/O  
pF  
5280 tbl 07b  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.42  
4
1234567...22

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