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IDT7052S25GGM PDF预览

IDT7052S25GGM

更新时间: 2024-01-04 01:25:12
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
11页 112K
描述
Application Specific SRAM, 2KX8, 25ns, CMOS, CPGA108

IDT7052S25GGM 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:S-XPGA-P108JESD-609代码:e3
内存密度:16384 bit内存集成电路类型:APPLICATION SPECIFIC SRAM
内存宽度:8端口数量:4
端子数量:108字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:2KX8输出特性:3-STATE
封装主体材料:CERAMIC封装代码:PGA
封装等效代码:PGA108,12X12封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified最大待机电流:0.03 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.36 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:MATTE TIN
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:30
Base Number Matches:1

IDT7052S25GGM 数据手册

 浏览型号IDT7052S25GGM的Datasheet PDF文件第2页浏览型号IDT7052S25GGM的Datasheet PDF文件第3页浏览型号IDT7052S25GGM的Datasheet PDF文件第4页浏览型号IDT7052S25GGM的Datasheet PDF文件第6页浏览型号IDT7052S25GGM的Datasheet PDF文件第7页浏览型号IDT7052S25GGM的Datasheet PDF文件第8页 
IDT7052S/L  
High-Speed 2K x 8 FourPort™ Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1,5) (VCC = 5.0V ± 10%)  
7052X20  
7052X25  
Com'l, Ind  
& Military  
7052X35  
Com'l &  
Military  
Com'l Only  
Symbol  
Parameter  
Condition  
Version  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC1  
Operating Power  
Supply Current  
(All Ports Active)  
COM'L.  
S
150  
150  
300  
250  
150  
150  
300  
250  
150  
150  
300  
250  
CE = VIL  
mA  
L
Outputs Disabled  
(3)  
f = 0  
____  
____  
____  
____  
MIL. &  
IND.  
S
L
150  
150  
360  
300  
150  
150  
360  
300  
I
CC2  
Dynamic Operating  
Current  
COM'L.  
S
L
240  
210  
370  
325  
225  
195  
350  
305  
210  
180  
335  
290  
CE = VIL  
mA  
mA  
Outputs Disabled  
(4)  
(All Ports Active)  
f = fMAX  
____  
____  
____  
____  
MIL. &  
IND.  
S
L
225  
195  
400  
340  
210  
180  
395  
330  
I
SB  
Standby Current  
(All Ports - TTL Level  
Inputs)  
COM'L.  
S
L
70  
60  
95  
80  
45  
40  
85  
70  
40  
35  
75  
60  
CE = VIH  
(4)  
f = fMAX  
____  
____  
____  
____  
MIL. &  
IND.  
S
L
45  
40  
115  
85  
40  
35  
110  
80  
ISB1  
Full Standby Current  
(All Ports - All CMOS  
Level Inputs)  
All Ports  
COM'L.  
S
L
1.5  
0.3  
15  
1.5  
1.5  
0.3  
15  
1.5  
1.5  
0.3  
15  
1.5  
mA  
CE > VCC - 0.2V  
V
IN > VCC - 0.2V or  
____  
____  
____  
____  
IN < 0.2V, f = 0(3)  
MIL. &  
IND.  
S
L
1.5  
0.3  
30  
4.5  
1.5  
0.3  
30  
4.5  
V
2674 tbl 06  
NOTES:  
1. 'X' in part number indicates power rating (S or L).  
2. VCC = 5V, TA = +25°C and are not production tested.  
3. f = 0 means no address or control lines change.  
4. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using AC Test Conditions” of input  
levels of GND to 3V.  
5. For the case of one port, divide the appropriate current above by four.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)  
7052S  
7052L  
Symbol  
|ILI  
|ILO  
Parameter  
Test Conditions  
Min.  
Max.  
10  
Min.  
Max.  
5
Unit  
µA  
µA  
V
(1)  
___  
___  
|
Input Leakage Current  
V
CC = 5.5V, VIN = 0V to VCC  
___  
___  
___  
___  
|
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
10  
5
CE = VIH, VOUT = 0V to VCC  
VOL  
IOL = 4mA  
0.4  
0.4  
___  
___  
VOH  
IOH = -4mA  
2.4  
2.4  
V
2674 tbl 07  
NOTE:  
1. At Vcc < 2.0V input leakages are undefined.  
5
6.42  

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