Datasheet > IDT16S60C_08

IDT16S60C_08

更新时间： 2024-10-02 12:20:19

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
7页	423K
描述
2nd Generation thinQ SiC Schottky Diode

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中文翻译

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数据手册

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IDT16S60C_08 数据手册

IDT16S60C

2^ndGeneration thinQ!^TMSiC Schottky Diode

Features

Product Summary

V _DC

Q _c

I _F

600

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery/ No forward recovery

• No temperature influence on the switching behavior

• High surge current capability

PG-TO220-2-2

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Breakdown voltage tested at 5mA²⁾

thinQ! 2G Diode specially designed for fast switching applications like:

• CCM PFC

• Motor Drives

Type

Package

Marking

Pin 1

Pin 2

IDT16S60C

PG-TO220-2-2

D16S60C

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _F

T _C<140 °C

f =50 Hz

Continuous forward current

RMS forward current

I _F,RMS

Surge non-repetitive forward current,

sine halfwave

I _F,SM

T _C=25 °C, t _p=10 ms

118

T _j=150 °C,

T _C=100 °C, D =0.1

I _F,RM

Repetitive peak forward current

I _F,max

T _C=25 °C, t _p=10 µs

T _C=25 °C, t _p=10 ms

Non-repetitive peak forward current

528

∫i ²dt

A²s

i ²t value

600

V _RRM

Repetitive peak reverse voltage

Diode dv/dt ruggedness

V_R=0…480V

dv/ dt

P _tot

V/ns

T _C=25 °C

Power dissipation

136

T _j, T _stg

Operating and storage temperature

Mounting torque

-55 ... 175

°C

M3 and M3.5 screws

page 1

Ncm

Rev. 2.1

2008-06-09

12 3 4 5 6 7

中文翻译

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