IC61S6432
64K x 32 SYNCHRONOUS
PIPELINE STATIC RAM
FEATURES
DESCRIPTION
TheICSIIC61S6432isahigh-speed,low-powersynchronous
staticRAMdesignedtoprovideaburstable,high-performance,
secondarycacheforthePentium™,680X0™,andPowerPC™
microprocessors. It is organized as 65,536 words by 32 bits,
fabricated with ICSI's advanced CMOS technology. The
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single monolithic
circuit. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock input.
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin LQFP and PQFP package
• Single +3.3V power supply
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3
controls DQ17-DQ24, BW4 controls DQ25-DQ32,
conditioned by BWE being LOW. A LOW on GW input would
cause all bytes to be written.
• Two Clock enables and one Clock disable to
eliminate multiple bank bus contention
• Control pins mode upon power-up:
– MODE in interleave burst mode
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IC61S6432 and controlled by the ADV (burst
address advance) input pin.
– ZZ in normal operation mode
These control pins can be connected to GNDQ
or VCCQ to alter their power-up state
Asynchronous signals include output enable (OE), sleep
mode input (ZZ), clock (CLK) and burst mode input (MODE).
A HIGH input on the ZZ pin puts the SRAM in the power-
down state. When ZZ is pulled LOW (or no connect), the
SRAM normally operates after three cycles of the wake-up
period. A LOW input, i.e., GNDQ, on MODE pin selects
LINEAR Burst. A VCCQ (or no connect) on MODE pin selects
INTERLEAVED Burst.
• Industrial temperature available
FAST ACCESS TIME
Symbol
tKQ
Parameter
CLK Access Time
-200(1)
-166
5
-133
5
-117
5
-5
5
-6
6
-7
7
-8
8
Unit
ns
4
tKC
Cycle Time
5
6
7.5
133
8.5
117
10
100
12
83
13
75
15
66
ns
—
Frequency
200
166
MHz
Note:
1. ADVANCE INFORMATION ONLY.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
SSR016-0A 09/13/2001
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