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IC41LV16105S-60T PDF预览

IC41LV16105S-60T

更新时间: 2024-01-10 11:29:28
品牌 Logo 应用领域
矽成 - ICSI 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
18页 199K
描述
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IC41LV16105S-60T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:0.400 INCH, TSOP2-50/44Reach Compliance Code:compliant
风险等级:5.83访问模式:FAST PAGE
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:TSOP44/50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:3.3 V
认证状态:Not Qualified刷新周期:1024
自我刷新:YES最大待机电流:0.0005 A
子类别:DRAMs最大压摆率:0.145 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
Base Number Matches:1

IC41LV16105S-60T 数据手册

 浏览型号IC41LV16105S-60T的Datasheet PDF文件第3页浏览型号IC41LV16105S-60T的Datasheet PDF文件第4页浏览型号IC41LV16105S-60T的Datasheet PDF文件第5页浏览型号IC41LV16105S-60T的Datasheet PDF文件第7页浏览型号IC41LV16105S-60T的Datasheet PDF文件第8页浏览型号IC41LV16105S-60T的Datasheet PDF文件第9页 
IC41C16105S  
IC41LV16105S  
ELECTRICAL CHARACTERISTICS(1)  
(Recommended Operating Conditions unless otherwise noted.)  
Symbol Parameter  
Test Condition  
Speed Min. Max.  
Unit  
IIL  
Input Leakage Current  
Any input 0V ꢀ VIN ꢀ Vcc  
Other inputs not under test = 0V  
–5  
5
µA  
IIO  
Output Leakage Current  
Output High Voltage Level  
Output Low Voltage Level  
Standby Current: TTL  
Output is disabled (Hi-Z)  
0V ꢀ VOUT ꢀ Vcc  
–5  
2.4  
5
µA  
V
VOH  
VOL  
ICC1  
IOH = –5.0 mA (5V)  
IOH = –2.0 mA (3.3V)  
—
0.4  
IOL = 4.2 mA (5V)  
IOL = 2.0 mA (3.3V)  
—
V
RAS, LCAS, UCAS > VIH  
Commerical  
5V  
—
2mA  
3.3V  
Extended & Idustrial 5V  
3.3V  
—
—
—
1
3
2
mA  
ICC2  
ICC3  
Standby Current: CMOS  
RAS, LCAS, UCAS > VCC – 0.2V  
5V  
3.3V  
—
—
1
0.5  
mA  
mA  
Operating Current:  
Random Read/Write(2,3,4)  
Average Power Supply Current  
RAS, LCAS, UCAS,  
Address Cycling, tRC = tRC (min.)  
-50  
-60  
—
—
160  
145  
ICC4  
ICC5  
ICC6  
Operating Current:  
<ast Page Mode(2,3,4)  
Average Power Supply Current  
RAS = VIL, LCAS, UCAS,  
Cycling tPC = tPC (min.)  
-50  
-60  
—
—
90  
80  
mA  
mA  
mA  
µA  
Refresh Current:  
RAS-Only(2,3)  
Average Power Supply Current  
RAS Cycling, LCAS, UCAS > VIH  
tRC = tRC (min.)  
-50  
-60  
—
—
160  
145  
Refresh Current:  
CBR(2,3,5)  
Average Power Supply Current  
RAS, LCAS, UCAS Cycling  
tRC = tRC (min.)  
-50  
-60  
—
—
160  
145  
ICCS  
Self Refresh Current  
Self Refresh mode  
5V  
3.3V  
—
—
650  
300  
Notes:  
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device  
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREꢀ refresh requirement is exceeded.  
2. Dependent on cycle rates.  
3. Specified values are obtained with minimum cycle time and the output open.  
4. Column-address is changed once each ꢀast page cycle.  
5. Enables on-chip refresh and address counters.  
6
Integrated Circuit Solution Inc.  
DR011-0A 05/23/2001  

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