IC41C16100S-60KG

更新时间： 2024-01-30 09:00:12

品牌	Logo	应用领域
矽成 - ICSI		存储动态存储器
页数	文件大小	规格书
21页	673K
描述
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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技术参数
数据手册

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IC41C16100S-60KG 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

IC41C16100S-60KG 数据手册

IC41C16100S

IC41LV16100S

TRUTH TABLE

Function

RAS

LCAS UCAS

Address t^R/tC I/O

Standby

Read: Word

Read: Lower Byte

High-Z

ROW/COL

DOUT

Lower Byte, DOUT

Upper Byte, High-Z

Read: Upper Byte

ROW/COL

Lower Byte, High-Z

Upper Byte, DOUT

Write: Word (Early Write)

Write: Lower Byte (Early Write)

ROW/COL

DIN

Lower Byte, DIN

Upper Byte, High-Z

Write: Upper Byte (Early Write)

Read-Write^(1,2)

ROW/COL

Lower Byte, High-Z

Upper Byte, DIN

→

DOUT, DIN

EDO Page-Mode Read⁽²⁾1st Cycle:

2nd Cycle:

→

ROW/COL

NA/COL

NA/NA

DOUT

→

Any Cycle:

EDO Page-Mode Write⁽¹⁾1st Cycle:

2nd Cycle:

ROW/COL

DIN

NA/COL

DIN

EDO Page-Mode^(1,2)

Read-Write

1st Cycle:

→

ROW/COL

NA/COL

DOUT, DIN

2nd Cycle:

→

Hidden Refresh

Read⁽²⁾

→

ROW/COL

DOUT

Write^(1,3)

→

ROW/COL

DOUT

RAS-Only Refresh

ROW/NA

High-Z

CBR Refresh⁽⁴⁾

→

Notes:

1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).

2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).

3. EARLY WRITE only.

4. At least one of the two CAS signals must be active (LCAS or UCAS).

Integrated Circuit Solution Inc.

DR010-0D 11/26/2004

1 2 345 6 7...21

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