是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TBGA, BGA62,12X9,40/32 |
针数: | 62 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.92 | 访问模式: | BLOCK ORIENTED PROTOCOL |
最大时钟频率 (fCLK): | 300 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B62 | JESD-609代码: | e0 |
长度: | 11.79 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | RAMBUS DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 62 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
组织: | 8MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TBGA |
封装等效代码: | BGA62,12X9,40/32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8/2.5,2.5 V | 认证状态: | Not Qualified |
刷新周期: | 16384 | 座面最大高度: | 1.185 mm |
子类别: | DRAMs | 最大供电电压 (Vsup): | 2.63 V |
最小供电电压 (Vsup): | 2.37 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 8.95 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IBM0712161KU1A-60J | IBM | Rambus DRAM, 8MX16, CMOS, PBGA62, 1 MM PITCH, MICRO, BGA-62 |
获取价格 |
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IBM0712161KU1A-80B | IBM | Rambus DRAM, 8MX16, CMOS, PBGA62, 1 MM PITCH, MICRO, BGA-62 |
获取价格 |
|
IBM0712161KU1A-80D | IBM | Rambus DRAM, 8MX16, CMOS, PBGA62, 1 MM PITCH, MICRO, BGA-62 |
获取价格 |
|
IBM0712161KU1A-80F | IBM | Rambus DRAM, 8MX16, CMOS, PBGA62, 1 MM PITCH, MICRO, BGA-62 |
获取价格 |
|
IBM11D1320B-60 | IBM | Fast Page DRAM Module, 1MX32, 60ns, CMOS, PSMA72 |
获取价格 |
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IBM11D1320B-60J | IBM | Fast Page DRAM Module, 1MX32, 60ns, CMOS, PSMA72 |
获取价格 |