Datasheet > HZS-L

HZS-L

更新时间： 2024-09-30 21:53:43

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管齐纳二极管
页数	文件大小	规格书
7页	74K
描述
Silicon Epitaxial Planar Zener Diode for Low Noise Application

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HZS-L 数据手册

HZS-L Series

Silicon Epitaxial Planar Zener Diode for

Low Noise Application

REJ03G0166-0200Z

(Previous: ADE-208-121A)

Rev.2.00

Jan.06.2004

Features

•

Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

stabilized power supply, etc.

•

Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-L Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.2.00, Jan.06.2003, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS-LL	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
HZS-LLSERIES	ETC	获取价格
HZS-LSERIES	ETC	获取价格
HZS-N	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS-NSERIES	ETC	获取价格
HZSSERIES	ETC	获取价格
HZSXX	HITACHI	获取价格	Zener Diode, 2V V(Z), 11.11%, 0.4W, Silicon, Unidirectional, DO-34
HZSXXLL	HITACHI	获取价格	Zener Diode, 2V V(Z), 11.11%, 0.25W, Silicon, Unidirectional, DO-34
HZSXXN	HITACHI	获取价格	Zener Diode, 2V V(Z), 7.84%, 0.4W, Silicon, Unidirectional, DO-34
HZT33	HITACHI	获取价格	Monolithic IC Zener Diode for Temperature Compensation