Datasheet > HY62UF8400ASLM-85I

HY62UF8400ASLM-85I

更新时间： 2024-10-01 08:04:27

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
9页	141K
描述
Standard SRAM, 512KX8, 85ns, CMOS, PBGA36, MICRO, BGA-36

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HY62UF8400A Series

512Kx8bit full CMOS SRAM

DESCRIPTION

FEATURES

Fully static operation and Tri-state output

TTL compatible inputs and outputs

Battery backup

-. 1.2V(min) data retention

Standard pin configuration

-. 36-ball uBGA

The HY62UF8400A is a high speed, super low

power and 4Mbit full CMOS SRAM organized as

512K words by 8bits. The HY62UF8400A uses

high performance full CMOS process technology

and is designed for high speed and low power

circuit technology. It is particularly well-suited for

the high density low power system application.

This device has a data retention mode that

guarantees data to remain valid at a minimum

power supply voltage of 1.2V.

Product No.

Voltage

(V)

Speed (ns)

Operation

Current/Icc(mA)

Standby

Current(uA)

Temperature

(°C)

HY62UF8400A

HY62UF8400A-I

2.7~3.3

55/70/85

0~70

-40~85(I)

Note 1. Blank : Commercial, I : Industrial

2. Current value is max.

PIN CONNECTION

BLOCK DIAGRAM

A1 CS2 A3

ROW

DECODER

I/O1

IO5 A2 /WE A4

IO1

IO2

Vcc

Vss

IO3

IO6

Vss

Vcc

IO7

NC A5

MEMORY ARRAY

512K x 8

A18 A17

IO8 /OE /CS1 A16 A15 IO4

A9 A10 A11 A12 A13 A14

I/O8

A18

/CS1

CS2

/OE

uBGA

/WE

PIN DESCRIPTION

Pin Name

Pin Function

Pin Name

Pin Function

Address Input

/CS1

CS2

/WE

/OE

Chip Select 1

Chip Select 2

Write Enable

Output Enable

A0 ~ A18

I/O1 ~ I/O8

Vcc

Data Input/Output

Power(2.7V~3.3V)

Ground

Vss

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.05 / Jun. 00

Hyundai Semiconductor

12 3 4 5 6 7...9

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