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HY62UF16101LLM-I-12 PDF预览

HY62UF16101LLM-I-12

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
9页 150K
描述
Standard SRAM, 64KX16, 120ns, CMOS, PBGA48, MICRO, BGA-48

HY62UF16101LLM-I-12 数据手册

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HY62UF16101 Series  
64Kx16bit full CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62UF16101 is a high speed, low power  
and 1M bit full CMOS SRAM organized as 65,536  
words by 16bit. The HY62UF16101 uses high  
performance full CMOS process technology and  
designed for high speed low power circuit  
technology. It is particularly well suited for used in  
high density low power system application. This  
device has a data retention mode that guarantees  
data to remain valid at a minimum power supply  
voltage of 1.5V.  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Battery backup  
-. 1.5V(min) data retention  
Standard pin configuration  
-. 48 - uBGA  
·
Product  
No.  
HY62UF16101  
HY62UF16101-I  
Voltage  
(V)  
2.7~3.3  
2.7~3.3  
Speed  
(ns)  
85*/100/120  
85*/100/120  
Operation  
Current/Icc(mA)  
Standby Current(uA) Temperature  
LL  
15  
15  
(°C)  
0~70  
-40~85(I)  
15  
15  
Note 1. Blank : Commercial, I : Industrial  
2. Current value is max.  
*
85ns is available with 30pF test load  
PIN CONNECTION  
BLOCK DIAGRAM  
A1~A7  
A14  
ROW  
DECODER  
/LB /OE A0 A1 A2 NC  
IO9 /UB A3 A4 /CS IO1  
IO10 IO11 A5 A6 IO2 IO3  
Vss IO12 NC A7 IO4 Vcc  
Vcc IO13 NC NC IO5 Vss  
IO15 IO14 A14 A15 IO6 IO7  
IO16 NC A12 A13 /WE IO8  
NC A8 A9 A10 A11 NC  
I/O1  
I/O8  
I/O9  
I/O16  
A15  
A8  
A9  
A10  
A11  
MEMORY ARRAY  
64K x 16  
A12  
A13  
A0  
/CS  
/OE  
/LB  
/UB  
/WE  
uBGA  
PIN DESCRIPTION  
Pin Name  
/CS  
/WE  
/OE  
/LB  
Pin Function  
Chip Select  
Write Enable  
Output Enable  
Pin Name  
I/O1~I/O16  
A0~A15  
Vcc  
Pin Function  
Data Inputs / Outputs  
Address Inputs  
Power( 2.7V ~ 3.3V )  
Ground  
Lower Byte Control(I/O1~I/O8)  
Vss  
/UB  
Upper Byte Control(I/O9~I/O16) NC  
No Connection  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.09 /Jun. 00  
Hyundai Semiconductor  

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