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HY62UF16101LLM-10I PDF预览

HY62UF16101LLM-10I

更新时间: 2024-02-15 00:55:49
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器内存集成电路
页数 文件大小 规格书
9页 135K
描述
Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48

HY62UF16101LLM-10I 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA,针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.77
最长访问时间:100 nsJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:6.3 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:0.95 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:6.2 mmBase Number Matches:1

HY62UF16101LLM-10I 数据手册

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HY62UF16101 Series  
64Kx16bit full CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62UF16101 is a high speed, low power  
and 1M bit full CMOS SRAM organized as 65,536  
words by 16bit. The HY62UF16101 uses high  
performance full CMOS process technology and  
designed for high speed low power circuit  
technology. It is particularly well suited for used in  
high density low power system application. This  
device has a data retention mode that guarantees  
data to remain valid at a minimum power supply  
voltage of 1.5V.  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Battery backup(LL-part)  
- 1.5V(min) data retention  
Standard pin configuration  
- 48ball uBGA  
·
Product  
No.  
Voltage  
(V)  
Speed  
(ns)  
Operation  
Current(mA)  
Standby Current(uA)  
Temperature  
(°C)  
LL-part  
HY62UF16101  
HY62UF16101-I  
3.0  
3.0  
100/120/150  
100/120/150  
15  
15  
15  
15  
0~70(Normal)  
-40~85(E.T.)  
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature  
2. Current value is max.  
PIN CONNECTION ( Top View )  
BLOCK DIAGRAM  
/OE  
A1 A2 NC  
/CS IO1  
IO9  
IO10 IO11  
Vcc IO13  
IO16 NC  
A6 IO2 IO3  
IO12 NC A7  
Vcc  
NC IO5 Vss  
IO14 A14 A15  
IO7  
A13 /WE IO8  
A8 A9 A10  
NC  
PIN DESCRIPTION  
Pin Name  
Pin Funtion  
Chip Select  
Write Enable  
Output Enable  
Pin Name  
I/O1~I/O16  
A0~A15  
Vcc  
Pin Funtion  
Data Input/Output  
Address Input  
Power( 2.7V ~ 3.3V )  
Ground  
/CS  
/WE  
/OE  
/LB  
Lower Byte Control(I/O1~I/O8)  
Vss  
/UB  
Upper Byte Control(I/O9~I/O16) NC  
No Connection  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.04 /Mar.99  
Hyundai Semiconductor  

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