5秒后页面跳转
HY62U8200LST-I-85 PDF预览

HY62U8200LST-I-85

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器光电二极管
页数 文件大小 规格书
11页 161K
描述
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

HY62U8200LST-I-85 数据手册

 浏览型号HY62U8200LST-I-85的Datasheet PDF文件第2页浏览型号HY62U8200LST-I-85的Datasheet PDF文件第3页浏览型号HY62U8200LST-I-85的Datasheet PDF文件第4页浏览型号HY62U8200LST-I-85的Datasheet PDF文件第5页浏览型号HY62U8200LST-I-85的Datasheet PDF文件第6页浏览型号HY62U8200LST-I-85的Datasheet PDF文件第7页 
HY62V8200-(I)/HY62U8200-(I) Series  
256Kx8bit CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62V8200-(I)/HY62U8200-(I) is a high  
speed, low power and 2M bit CMOS SRAM  
organized as 262,144 words by 8bit. The  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Battery backup( L/LL-part )  
HY62V8200-(I)  
/
HY62U8200-(I) uses high  
- 2.0V(min) data retention  
performance CMOS process technology and  
designed for high speed low power circuit  
technology. It is particularly well suited for used in  
high density low power system application. This  
device has a data retention mode that guarantees  
data to remain valid at a minimum power supply  
voltage of 2.0V.  
·
Standard pin configuration  
- 32pin 8x20mm TSOP-I / 8x13.4mm TSOP-I  
(Standard and Reversed)  
Product  
No.  
HY62V8200  
HY62V8200-I  
HY62U8200  
HY62U8200-I  
Voltage  
(V)  
Speed  
(ns)  
70*/85/100  
70*/85/100  
70*/85/100  
70*/85/100  
Operation  
Current(mA)  
Standby Current(uA)  
Temperature  
(°C)  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
L
LL  
15  
20  
15  
20  
3.3  
3.3  
3.0  
3.0  
5
5
5
5
50  
50  
50  
50  
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature  
2. Current value is max.  
3. * measured with 30pF test load  
PIN CONNECTION  
/OE  
A10  
/CS1  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
Vss  
DQ3  
DQ2  
DQ1  
A0  
A11  
A9  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
2
A3  
A4  
A5  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
16  
15  
14  
13  
12  
11  
10  
9
A2  
A8  
3
A6  
A1  
A13  
/WE  
CS2  
A15  
Vcc  
A17  
A16  
A14  
A12  
A7  
4
A0  
A7  
5
A12  
A14  
A16  
A17  
Vcc  
A15  
CS2  
/WE  
A13  
A8  
DQ1  
DQ2  
DQ3  
Vss  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
/CS1  
A10  
/OE  
6
7
8
9
8
10  
11  
12  
13  
14  
15  
16  
7
6
5
4
A6  
A1  
3
A5  
A2  
A9  
2
A4  
A3  
A11  
1
sTSOP-I/TSOP-I(Standard)  
sTSOP/TSOP-I(Reversed)  
PIN DESCRIPTION  
BLOCK DIAGRAM  
Pin Name  
/CS1  
Pin Function  
ROW DECODER  
I/O1  
A0  
Chip Select 1  
Chip Select 2  
Write Enable  
Output Enable  
Address Input  
Data Input/Output  
Power(3.3V or 3.0V)  
Ground  
CS2  
/WE  
MEMORY ARRAY  
2048x1024  
/OE  
A0 ~ A17  
I/O1 ~ I/O8  
Vcc  
A17  
I/O8  
/CS1  
CS2  
Vss  
/WE  
/OE  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.06 /Jan99  
Hyundai Semiconductor  

与HY62U8200LST-I-85相关器件

型号 品牌 描述 获取价格 数据表
HY62U8200LT1-85 HYNIX Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

获取价格

HY62U8200LT1-85I HYNIX Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

获取价格

HY62U8200LT1-I-85 HYNIX Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

获取价格

HY62U8400A HYNIX 512Kx8bit CMOS SRAM

获取价格

HY62U8400AG-55 HYNIX Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, SOP-32

获取价格

HY62U8400AG-70I HYNIX Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, SOP-32

获取价格