HY62V8200-(I)/HY62U8200-(I) Series
256Kx8bit CMOS SRAM
DESCRIPTION
FEATURES
The HY62V8200-(I)/HY62U8200-(I) is a high
speed, low power and 2M bit CMOS SRAM
organized as 262,144 words by 8bit. The
·
·
·
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup( L/LL-part )
HY62V8200-(I)
/
HY62U8200-(I) uses high
- 2.0V(min) data retention
performance CMOS process technology and
designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 2.0V.
·
Standard pin configuration
- 32pin 8x20mm TSOP-I / 8x13.4mm TSOP-I
(Standard and Reversed)
Product
No.
HY62V8200
HY62V8200-I
HY62U8200
HY62U8200-I
Voltage
(V)
Speed
(ns)
70*/85/100
70*/85/100
70*/85/100
70*/85/100
Operation
Current(mA)
Standby Current(uA)
Temperature
(°C)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
L
LL
15
20
15
20
3.3
3.3
3.0
3.0
5
5
5
5
50
50
50
50
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
3. * measured with 30pF test load
PIN CONNECTION
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A11
A9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
A3
A4
A5
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
16
15
14
13
12
11
10
9
A2
A8
3
A6
A1
A13
/WE
CS2
A15
Vcc
A17
A16
A14
A12
A7
4
A0
A7
5
A12
A14
A16
A17
Vcc
A15
CS2
/WE
A13
A8
DQ1
DQ2
DQ3
Vss
DQ4
DQ5
DQ6
DQ7
DQ8
/CS1
A10
/OE
6
7
8
9
8
10
11
12
13
14
15
16
7
6
5
4
A6
A1
3
A5
A2
A9
2
A4
A3
A11
1
sTSOP-I/TSOP-I(Standard)
sTSOP/TSOP-I(Reversed)
PIN DESCRIPTION
BLOCK DIAGRAM
Pin Name
/CS1
Pin Function
ROW DECODER
I/O1
A0
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Input
Data Input/Output
Power(3.3V or 3.0V)
Ground
CS2
/WE
MEMORY ARRAY
2048x1024
/OE
A0 ~ A17
I/O1 ~ I/O8
Vcc
A17
I/O8
/CS1
CS2
Vss
/WE
/OE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.06 /Jan99
Hyundai Semiconductor