5秒后页面跳转
HY62U16100LR2-I-12 PDF预览

HY62U16100LR2-I-12

更新时间: 2024-01-16 07:19:59
品牌 Logo 应用领域
海力士 - HYNIX ISM频段静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 151K
描述
Standard SRAM, 128KX8, 120ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44

HY62U16100LR2-I-12 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2-R,针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:120 nsJESD-30 代码:R-PDSO-G44
JESD-609代码:e6长度:18.41 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2-R封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN BISMUTH端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

HY62U16100LR2-I-12 数据手册

 浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第2页浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第3页浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第4页浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第5页浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第6页浏览型号HY62U16100LR2-I-12的Datasheet PDF文件第7页 
HY62V16100-(I)/HY62U16100-(I) Series  
64Kx16bit CMOS SRAM  
DESCRIPTION  
FEATURES  
The HY62V16100-(I)/HY62U16100-(I) is a high-  
speed, low power and 1M bits CMOS SRAM  
organized as 65,536 words by 16 bits. The  
HY62V16100-(I)/ HY62U16100-(I) uses sixteen  
common input and output lines and has an output  
enable pin which operates faster than address  
access time at a read cycle. The device is  
fabricated using HYUNDAI's advanced CMOS  
process and designed with high-speed low power  
circuit technology. It is particulary well suited for  
being used in high-density and low power system  
applications.  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Data Byte Control  
- LB : I/O1 ~ I/O8, UB : I/O9 ~ I/O16  
Battery backup(L/LL-part)  
- 2.0V(min) data retention  
Standard pin configuration  
- 44pin 400mil TSOP-II  
·
·
(Standard and Reversed)  
Product  
No.  
HY62V16100  
HY62V16100-I  
HY62U16100  
HY62U16100-I  
Supply  
Voltage(V)  
3.3  
Speed  
(ns)  
85/100/120  
85/100/120  
100/120/150  
100/120/150  
Operation  
Current(mA)  
Standby Current(uA) Temperature.  
L
LL  
10  
15  
10  
10  
(°C)  
5
5
5
5
50  
50  
50  
50  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
3.3  
3.0  
3.0  
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature  
2. Current value is max.  
PIN CONNECTION  
BLOCK DIAGRAM  
ROW  
DECODER  
A1~A7  
A14  
I/O1  
A4  
A3  
A5  
NC  
A12  
A13  
A14  
A15  
/WE  
I/O8  
I/O7  
NC  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
A6  
A11  
A10  
A9  
A2  
A7  
3
A1  
A0  
/OE  
/UB  
/LB  
A15  
4
A8  
NC  
5
I/O8  
I/O9  
/CS  
I/O1  
I/O2  
I/O3  
I/O4  
Vcc  
GND  
I/O5  
I/O6  
I/O7  
I/O8  
/WE  
A15  
A14  
A13  
A12  
NC  
6
A8  
A9  
I/O16  
I/O15  
I/O9  
I/O10  
I/O11  
I/O12  
Vcc  
GND  
I/O13  
I/O14  
I/O15  
I/O16  
/LB  
7
8
I/O14 I/O6  
9
MEMORY ARRAY  
512x128x16  
I/O13  
I/O5  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A10  
A11  
GND GND  
Vcc  
Vcc  
I/O4  
I/O3  
I/O12  
I/O11  
A12  
A13  
I/O10 I/O2  
8
I/O16  
I/O9  
NC  
A8  
I/O1  
/CS  
A0  
7
6
5
/UB  
/OE  
A7  
A6  
A5  
A9  
A1  
4
A0  
A10  
A11  
NC  
A2  
3
2
A3  
1
A4  
/CS  
/OE  
/LB  
/UB  
/WE  
TSOP-II(Standard)  
TSOP-II(Reversed)  
PIN DESCRIPTION  
Pin Name  
Pin Funtion  
Chip Select  
Write Enable  
Output Enable  
Low Byte Control(I/O1~I/O8)  
Pin Name  
I/O1~I/O16  
A0~A15  
Vcc  
Pin Funtion  
/CS  
/WE  
/OE  
/LB  
Data Input/Output  
Address Input  
Power(3.3V/3.0V)  
Ground  
Vss  
/UB  
Upper Byte Control(I/O9~I/O16) NC  
No Connection  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.07 /Jan.99  
Hyundai Semiconductor  

与HY62U16100LR2-I-12相关器件

型号 品牌 获取价格 描述 数据表
HY62U16100LR2-I-15 HYNIX

获取价格

Standard SRAM, 128KX8, 150ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
HY62U16100LT2-10 HYNIX

获取价格

Standard SRAM, 128KX8, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY62U16100LT2-10I HYNIX

获取价格

Standard SRAM, 64KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY62U16100LT2-12 HYNIX

获取价格

Standard SRAM, 128KX8, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY62U16100LT2-15 HYNIX

获取价格

Standard SRAM, 128KX8, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY62U16100LT2-I-12 HYNIX

获取价格

Standard SRAM, 128KX8, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
HY62U256BJ-10I HYNIX

获取价格

Standard SRAM, 32KX8, 100ns, CMOS
HY62U256BJ-15 HYNIX

获取价格

Standard SRAM, 32KX8, 150ns, CMOS
HY62U256BLJ-10 HYNIX

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28
HY62U256BLJ-10I HYNIX

获取价格

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28