Datasheet > HY62U256BLLR1

HY62U256BLLR1

更新时间： 2023-01-02 15:41:03

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器光电二极管
页数	文件大小	规格书
10页	144K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, TSOP1-28

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中文翻译

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HY62U256BLLR1 数据手册

HY62V256B-(I)/HY62U256B-(I) Series

32Kx8bit CMOS SRAM

DESCRIPTION

FEATURES

The HY62V256B-(I)/ HY62U256B-(I) is a high-

speed, low power and 32,786 x 8-bits CMOS

Static Random Access Memory fabricated using

Hyundai's high performance CMOS process

technology. It is suitable for use in low voltage

operation and battery back-up application. This

device has a data retention mode that guarantees

data to remain valid at the minimum power supply

voltage of 2.0 volt.

Fully static operation and Tri-state output

TTL compatible inputs and outputs

Low power consumption

Battery backup(LL-part)

- 2.0V(min.) data retention

Standard pin configuration

- 28 pin 330mil SOP

- 28 pin 8x13.4 mm TSOP-I

(Standard and Reversed)

Product

No.

Voltage

(V)

Speed

(ns)

Operation

Current(mA)

Standby

Current(uA)

Temperature

(°C)

HY62V256B

HY62V256B-I

HY62U256B

HY62U256B-I

3.3

3.0

85/100/120

100/120/150

0~70(Normal)

-40~85(E.T.)

0~70(Normal)

-40~85(E.T.)

Note 1. E.T. : Extended Temperature, Normal : Normal Temperature

2. Current value is max.

PIN CONNECTION

A14

A12

Vcc

/WE

A13

/OE

A11

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

Vss

I/O3

I/O2

I/O1

I/O2

I/O3

Vss

I/O4

I/O5

I/O6

I/O7

I/O8

/CS

A10

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A13

/WE

Vcc

A14

A12

A14

Vcc

/WE

A13

I/O1

I/O2

I/O3

Vss

A11

/OE

SOP

TSOP-I(Standard)

TSOP-I(Reversed)

PIN DESCRIPTION

BLOCK DIAGRAM

ROW DECODER

I/O1

Pin Name

Pin Function

Chip Select

Write Enable

/CS

/WE

MEMORY ARRAY

512x512

/OE

Output Enable

Address Inputs

Data Input/Output

Power(+3.3V or 3.0V)

Ground

A0 ~ A14

I/O1 ~ I/O8

Vcc

A14

I/O8

/CS

/OE

/WE

Vss

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.02 /Jan.99

Hyundai Semiconductor

12 3 4 5 6 7...10

中文翻译

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与HY62U256BLLR1相关器件

型号	品牌	获取价格	描述	数据表
HY62U256BLLR1-10	HYNIX	获取价格	Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-10I	HYNIX	获取价格	Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-12	HYNIX	获取价格	Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-12I	HYNIX	获取价格	Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-15	HYNIX	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-15I	HYNIX	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
HY62U256BLLR1-85	ETC	获取价格	x8 SRAM
HY62U256BLLR1-I10	ETC	获取价格	x8 SRAM
HY62U256BLLR1-I12	ETC	获取价格	x8 SRAM
HY62U256BLLR1-I85	ETC	获取价格	x8 SRAM

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